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Catalyst chemical vapor deposition apparatus

A chemical vapor growth, catalyst technology, applied in physical/chemical process catalysts, gaseous chemical plating, liquid chemical plating and other directions, can solve the problems of low mechanical strength, unassisted production efficiency, temperature rise, etc.

Active Publication Date: 2011-11-16
ULVAC INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, tantalum has lower mechanical strength than tungsten, especially when used in high temperature environments, its creep strength is low
Therefore, when metal tantalum is used as a filamentous catalyst, there are problems in that it is heated and stretched when heated, so that the wire diameter becomes smaller, and its resistance increases to cause a temperature rise, so it is easy to fuse
This does not help increase productivity
[0009] In addition, Patent Document 2 discloses a filamentous catalyst coated with boron nitride (BN) on the surface of the tantalum wire, but the use of boron nitride coating can not prolong the service life of the filamentous catalyst, so people expect to improve it further

Method used

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no. 2 approach

[0040] Next, the catalyst-assisted chemical vapor growth method in the second embodiment of the present invention will be described.

[0041] Inside the reaction chamber 2 are provided a substrate S and a tantalum wire as a wire catalyst 6 . Then, the vacuum pump 4 is operated to exhaust the gas inside the vacuum chamber 3 and make it into a vacuum state. At this time, the inside of the reaction chamber 2 can be decompressed to a predetermined vacuum degree (for example, 1 Pa). Next, the raw material gas and diborane gas are introduced into the reaction chamber 2 from the raw material gas supply part 9a and the diborane gas supply part 9b through the gas introduction pipe 7, and the filament catalysts 6 are energized by the control part 8 to turn them Heating to a temperature above the specified value (for example, 1700°C).

[0042] The diborane gas introduced into the reaction chamber 2 contacts and decomposes the filament catalyst 6 , thereby forming a boride (tantalum bori...

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Abstract

The invention provides a catalyst chemical vapor deposition apparatus which can prolong the service life of a catalyst wire. A catalyst chemical vapor deposition apparatus (1) comprising a catalyst wire (6), the catalyst wire (6) comprising a tantalum wire and a layer of tantalum boride provided on the surface of the tantalum wire. The boride of the metallic tantalum (tantalum boride) has a larger hardness than the metallic tantalum. Accordingly, the use of the tantalum wire, with the boride layer formed on the surface thereof, as a catalyst wire can reduce thermal expansion of the catalyst wire, can improve the mechanical strength, and can prolong the service life. When electric heating of the catalyst wire (6) is performed by continuous energization, further prolongation of the service life of the catalyst wire (6) can be realized.

Description

technical field [0001] The present invention relates to a catalyst-assisted chemical vapor phase growth device. The catalyst-assisted chemical vapor phase growth device provides raw material gas to a filamentous catalyst arranged in a reaction chamber and is heated, and deposits the generated decomposed products in the reaction chamber. A device for forming a film on a substrate to be film-formed. Background technique [0002] Catalyst-Assisted Chemical Vapor Deposition (CAT-CVD: catalytic-Chemical Vapor Deposition) is a film-forming processing method that supplies a reaction gas to a filamentous catalyst heated to, for example, 1500-2000°C, and utilizes the catalytic reaction of the reaction gas or The thermal decomposition reaction causes the generated decomposition products (deposits) to be deposited on the substrate to be film-formed. [0003] The catalyst-assisted chemical vapor growth method is similar to the plasma CVD method in which the decomposition product of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44H01L21/205B01J35/00
CPCC23C16/24C23C16/4488C23C8/08C23C16/345C23C16/44C23C16/455H01L21/0262B01J35/00C23C16/06C23C16/46C23C18/02
Inventor 大园修司桥本征典浅利伸
Owner ULVAC INC
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