High-speed electrically regulated terahertz modulator
A terahertz, electrical control technology, applied in instruments, nonlinear optics, optics, etc., can solve the problems of low modulation speed, difficult to achieve steep band gap edge of THz modulator, modulation depth and insertion loss are not very ideal, etc. Effects of high-speed modulation
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[0033] The preparation, testing and analysis process of the high-speed electrical modulation terahertz modulator is as follows:
[0034] Step 1: Using the software FDTD Solution based on the finite difference in time domain, establish the model structure of the terahertz wave modulator, in which the metallic frequency selective surface structure 2 is set to 200 nanometers thick gold. By optimizing the gate G, source S, and drain D dimensions, the simulation obtains the maximum relative modulation depth when the channel conductance is turned on and off in a gated high electron mobility transistor. The best parameters obtained are: source width S=1 micron, drain width D=1 micron and gate width G=7 micron, periodic unit spacing d=50 micron, modulator relative modulation depth in frequency range 0.82-0.92THz 75%.
[0035] Step 2: Prepare a photolithography plate, use the inductively coupled plasma etching method to etch the transistor substrate mesa, and use the photoresist as a ...
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