A kind of transparent conductive film with high cashmere value and preparation method thereof

A technology of transparent conductive film and transparent conductive film, applied in the direction of conductive layer on insulating carrier, cable/conductor manufacturing, circuit, etc., can solve the problem of low long-wavelength light scattering ability and achieve high transmittance and low resistivity , the effect of high scattering transmittance

Inactive Publication Date: 2011-12-14
BAODING TIANWEI GRP CO LTD
View PDF7 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As mentioned above, the problem in the background technology is: the light scattering ability of the conductive film layer, especially the long-wavelength light scattering ability is not

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of transparent conductive film with high cashmere value and preparation method thereof
  • A kind of transparent conductive film with high cashmere value and preparation method thereof
  • A kind of transparent conductive film with high cashmere value and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1. Float glass is used as the front substrate. After ultrasonic cleaning, an aluminum-doped zinc oxide film is grown on the glass by radio frequency magnetron sputtering technology.

[0024] The above-mentioned deposition process, the selected target material is 2wt%Al 2 o 3 ZnO is doped, the gas pressure is 3mTorr, the substrate temperature is 200°C, the radio frequency power is 250W, and the flow rate of argon gas is 2sccm to deposit the ZnO transparent conductive film.

[0025] The ZnO transparent conductive film prepared by magnetron sputtering is subjected to wet etching, preferably with hydrochloric acid etching solution with a concentration of 1 wt%. By controlling the etching time to 80s, the textured ZnO transparent conductive film can be obtained.

[0026] The obtained suede transparent conductive film has an average transmittance of more than 78% from 400nm to 900nm and a resistivity of less than 3.2×10 -4 Ω·cm.

Embodiment 2

[0027] Embodiment two, as described in embodiment one transparent conductive film preparation method, pass into argon gas flow rate and change 10sccm, the 400nm--900nm average transmittance of gained suede surface transparent conductive film is greater than 78%, and resistivity is less than 3 * 10 -4 Ω·cm.

Embodiment 3

[0028] Embodiment three, as the preparation method of transparent conductive film described in embodiment one, pass into argon gas flow rate and change 20sccm, the 400nm--900nm average transmittance of gained suede surface transparent conductive film is greater than 79%, and resistivity is less than 2.8 * 10 -4 Ω·cm.

[0029] Refer to attached figure 1 , 2 , with the change of the gas flow rate, from the first embodiment to the third embodiment, the velvet of the obtained sample increases continuously. In Example 3, the velvet value at 900nm wavelength is 62.8%, and the sample has excellent light scattering ability in the spectral range of 400nm--900nm; the velvet value at 1100nm wavelength is 28.4%, and the sample has high light scattering ability in the near-infrared band. attached image 3 It is a micrograph of the sample obtained in Example 3. It can be seen that the surface of the sample has a high roughness and the cavities have different sizes, which is beneficial to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Resistivityaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a transparent conductive film with high velvet value and a preparation method thereof, belonging to the technical field of thin film solar cell manufacturing. The technical solution is: ① On the cleaned glass substrate, use the magnetron sputtering process to prepare a layer of 1000nm-1500nm ZnO transparent conductive layer; ② Keep the gas pressure, substrate temperature, and RF power unchanged, and change the input Argon flow in the reaction chamber to prepare ZnO transparent conductive film; ③The obtained ZnO transparent conductive film is wet-etched; ④After etching, the ZnO transparent conductive film is cleaned with deionized water and dried with nitrogen gas to obtain Textured ZnO transparent conductive film. Advantages and positive effects of the present invention: high velvet, high light scattering ability, high near-infrared light scattering ability, high transmittance, low conductance, and the prepared ZnO transparent conductive film has high scattering transmittance, high transmittance and low resistivity.

Description

technical field [0001] The invention relates to a transparent conductive film with high velvet value and a preparation method thereof, belonging to the technical field of thin film solar cell manufacturing. Background technique [0002] Due to its excellent electrical and optical properties, zinc oxide (ZnO) transparent conductive thin film is especially suitable for use as a front electrode in the field of thin film solar cells. For the front electrode of thin-film solar cells, the transmittance and resistivity are important indicators to measure the excellent performance of the electrode. Under the premise that the transmittance of the front electrode material is constant, improving the light scattering ability of the front electrode material can effectively increase the optical path and significantly improve the utilization rate of the absorbing layer for incident light. At the same time, the thickness of the film can be reduced to reduce the manufacturing cost of the ba...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L31/0224H01B13/00H01B5/14C23C14/08C23C14/35C23C14/58C23F1/00
CPCY02P70/50
Inventor 宋鑫潘清涛胡增鑫刘佳贾海军麦耀华
Owner BAODING TIANWEI GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap