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A kind of led device and led module device thereof

A technology for LED devices and LED modules, which is applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc., can solve problems such as the reduction of light efficiency, and achieve the effect of high luminous efficiency and good heat dissipation performance.

Active Publication Date: 2011-12-21
APT ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this packaging method can also improve the heat dissipation capacity of the LED, because the DLC itself is an opaque film, it has a certain absorption of the LED light, which will lead to a decrease in the light efficiency.

Method used

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  • A kind of led device and led module device thereof
  • A kind of led device and led module device thereof
  • A kind of led device and led module device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 2 As shown, this embodiment discloses an LED device, including a plurality of LED chips 1 (only one LED chip is schematically shown in the figure), and a substrate 2, and the LED chip 1 shown is flip-chip on the substrate 2 .

[0049] Such as figure 1 As mentioned above, the LED chip 1 includes a sapphire substrate 11 , an N-type gallium nitride 12 , a multi-layer quantum well light-emitting layer 13 , a P-type gallium nitride 14 , a P electrode 15 , a metal bump 16 and an N electrode 17 . N-type GaN 12 is grown on the sapphire substrate 11 , a light-emitting layer 13 is grown on the N-type GaN 12 , and a P-type GaN 14 is grown on the light-emitting layer 13 . Through process steps such as photolithography, etching, metal layer deposition and passivation layer protection, and finally through the split process, P electrodes 15 and metal bumps 16 are formed on the P-type GaN 14 layer, and on the N-type GaN 12 N electrodes 17 and metal bumps 16 are formed ...

Embodiment 2

[0063] Such as image 3 As shown, the difference between this embodiment and embodiment 1 is that: the position of the high reflection layer 3 is disposed on the lower surface of the P-type gallium nitride 14 of the LED chip 1 .

[0064] In this embodiment, since the reflective layer 3 is disposed on the P-type gallium nitride layer 14, the thickness of the first heat dissipation layer 25 deposited on the metal electrode layer can be the same as the height of the P pad 26 and the N pad 27 on the substrate 2; Since the first heat dissipation layer adopts diamond-like carbon film (DLC) or diamond film, it has high heat dissipation, can accelerate the heat from the LED chip to circulate in the lateral direction, and quickly introduce heat to the metal substrate, and because the diamond-like carbon film ( DLC) or diamond film has excellent characteristics of hardness and wear resistance, and the diamond-like film (DLC) or diamond film deposited on the metal electrode layer plays a...

Embodiment 3

[0066] Such as Figure 4 Shown, the difference between this embodiment and embodiment 1 is:

[0067] (1) A diamond-like carbon film (DLC) or a diamond film is also attached to the side walls of the P pad 26 and the N pad 27 to further improve the heat dissipation effect of the LED device.

[0068] (2) The high reflective layer 3 is a multi-layer distributed Bragg reflective layer formed by the periodic growth of the following materials:

[0069] Indium (In), Aluminum (Al), Gold (Au), Platinum (Pt), Zinc (Zn), Silver (Ag), Titanium (Ti), Silicon Nitride (SiNx), Silicon Dioxide (SiO 2 ), aluminum oxide (Al 2 o 3 ), titanium monoxide (TiO), titanium dioxide (TiO 2 ), titanium dioxide (Ti 2 o 3 ), and zirconium dioxide (ZrO 2 ).

[0070] The Bragg reflection layer is a layered structure in which two materials with different refractive indices are grown alternately periodically, and can reflect the light incident on the substrate back to the upper surface by using the Bragg...

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Abstract

The invention belongs to the technical field of a LED (Light Emitting Diode), in particular disclosing an LED (Light Emitting Diode) device and an LED (Light Emitting Diode) module device thereof. The LED (Light Emitting Diode) device comprises a substrate and a plurality of LED (Light Emitting Diode) device chips which are inversely arranged on the substrate, wherein an insulating layer of the substrate is made of a diamond-like carbon (DLC) film or a diamond film; first heat dissipation layers are arranged on the upper surfaces of a P region metal electrode layer and an N region metal electrode layer of the substrate and between the P region metal electrode layer and the N region metal electrode layer; the first heat dissipation layers are also made of the diamond-like carbon (DLC) films or diamond films; and a high reflecting layer is arranged on the upper surface of the first heat dissipation layer or on the lower surface of the P type gallium nitride of the LEDs (Light Emitting Diode). The LED (Light Emitting Diode) device is packaged to obtain the LED (Light Emitting Diode) module device of the invention. The invention has the advantages of obtaining better heat dissipation performance and luminous efficiency through the improvement of the material and the structure and being suitable for the development requirement of a LED (Light Emitting Diode).

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an inverted LED device with high heat dissipation and high light efficiency and an LED module device thereof. Background technique [0002] In order to obtain a higher brightness LED, the input current of the LED is usually increased, but with the increase of the current, the heat generated by the LED chip increases sharply. Shorten LED life. [0003] With the widening of LED application fields, various LED package structure light sources have appeared, which include LED chips and substrates. Among them, the traditional metal-based circuit board (MCPCB) is a substrate with relatively good heat dissipation performance. Its general structure includes a metal base on the bottom layer, an insulating layer on the metal base, and an insulating layer between the insulating layers. The upper circuit layer; where the metal substrate is made of aluminum and copper metals with ex...

Claims

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Application Information

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IPC IPC(8): H01L33/64H01L33/60H01L25/075
Inventor 何贵平许朝军陈海英周玉刚
Owner APT ELECTRONICS
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