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Method for making micro nanometer structure device by laser two-photon direct writing technology

A micro-nano structure and two-photon technology, which is applied in the manufacture of micro-structure devices, micro-structure devices, micro-structure technology, etc., can solve the problems that cannot be directly applied to the manufacturing process of semiconductor devices, and achieve low cost, wide application prospects, and reduced process The effect of steps

Active Publication Date: 2014-11-26
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing femtosecond laser direct writing technology for processing glass substrates cannot be directly applied to the manufacturing process of semiconductor devices with opaque materials as substrates

Method used

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  • Method for making micro nanometer structure device by laser two-photon direct writing technology
  • Method for making micro nanometer structure device by laser two-photon direct writing technology
  • Method for making micro nanometer structure device by laser two-photon direct writing technology

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0069] The following combination Figure 5-12 , the method of the present invention will be described in detail by taking the fabrication of a FinFET device on an SOI substrate as an example.

[0070] First, a photoresist is coated on the SOI substrate to form a photoresist layer.

[0071] A negative photoresist with trade name SCR500 is coated on the SOI substrate to obtain a photoresist layer 501, such as Figure 5 shown. The SOI substrate is composed of a top silicon layer 502 , a silicon oxide insulating layer 503 and a silicon substrate 504 from top to bottom. The thickness of the top silicon layer is, for example, 55 nm, and the thickness of the silicon oxide insulating layer is, for example, 150 nm.

[0072] Secondly, the photoresist layer is exposed by means of laser two-photon absorption, and the FinFET device pattern is exposed in the photoresist layer.

[0073] Turn on the laser light source in the laser micro-nanofabrication system. The laser source is a titan...

example 2

[0083] Referring to FIG. 13 , the method of the present invention will be described in detail by taking the preparation of a metal grid structure on a GaAs substrate as an example.

[0084] First, a layer of positive photoresist AZ4620 with a thickness of 180 nm is coated on the GaAs substrate 1301 to form a photoresist layer 1302, such as Figure 13A shown. The pre-baking temperature of the photoresist is, for example, 95° C., and the pre-baking time is 90 s.

[0085] Secondly, the positive photoresist is exposed by using laser two-photon absorption effect.

[0086] Adjust the laser light source in the laser micro-nano processing system, and adjust the output wavelength of the laser to a single wavelength that can cause the coated photoresist to produce a two-photon effect, that is, 780nm. Adjust the exposure time to 1ms-10min by adjusting the shutter on the laser light path. Adjust the optical attenuator of the laser light path to adjust the laser power to 0.1μW-1W. Adju...

example 3

[0093] The present invention will be described in detail below by taking the preparation of a two-dimensional metal lattice on a glass substrate as an example.

[0094] First, coat a layer of positive photoresist AZ6130 with a thickness of 120 nm on the glass substrate. The photoresist pre-baking temperature is 90°C, and the pre-baking time is 100s;

[0095] Second, the positive photoresist is exposed using the two-photon absorption effect of a single-wavelength laser beam. By adjusting the laser power to 1.99mW and the exposure time to 10ms to control the exposure conditions of the photoresist, a hole array with an aperture of 370nm can be formed, such as Figure 14A shown.

[0096] Further, using the photoresist formed with the hole array as a mask, an Au layer with a thickness of, for example, 60 nm is evaporated.

[0097] Further, the photoresist on the surface of the glass is peeled off, and the Au layer above the photoresist is peeled off at the same time to obtain a ...

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Abstract

The invention relates to a method for making a micro nanometer structure device by the laser two-photon direct writing technology, which comprises the following steps that: photoresist is coated on a substrate for forming a photoresist layer; a laser beam is used for irradiating the photoresist, and the exposure is carried out on the specific position of the photoresist through the laser two-photon absorption effect; the photoresist is developed; and obtained patterns of the photoresist layer are transferred onto the substrate.

Description

technical field [0001] The invention relates to a method for manufacturing a micro-nano structure device, in particular to a method for manufacturing a micro-nano structure device by using laser two-photon direct writing technology. Background technique [0002] For more than 50 years, photolithography has occupied the dominant position of micro-nano processing technology. Since conventional photolithography is usually single-photon planar exposure, the processing resolution is limited by the diffraction limit of classical optics. In order to obtain higher resolution, the wavelength of the light source used in lithography technology has been developed from infrared wavelength to deep ultraviolet KrF laser wavelength (248nm) and ArF laser wavelength (193nm), and the processing method has been developed from ordinary laser lithography to X-ray Photolithography, electron beam lithography, ion beam lithography, nano pattern transfer printing, etc. These processing technologies...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B23K26/364
Inventor 段宣明陈述曹洪忠韩伟华颜伟张严波董贤子杨富华赵震声
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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