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Method for lowering ultrahard multi-layer thin film residual stress based on high-intensity pulsed ion beam technique

A high-current pulse, multi-layer film technology, applied in ion implantation plating, coating, metal material coating process, etc. Thin film applications and other issues, to achieve good energy deposition depth distribution, process reliability and repeatability, and good economic benefits

Inactive Publication Date: 2012-01-18
DALIAN UNIV OF TECH
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Problems solved by technology

Although the overall performance of multilayer films is better than that of single-layer films, due to the existence of multiple interfaces, large lattice mismatches may occur, resulting in large residual stress in multilayer films, which largely limits application of multilayer films
But so far, there is no method for reducing the stress of superhard multilayer films after film formation

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  • Method for lowering ultrahard multi-layer thin film residual stress based on high-intensity pulsed ion beam technique
  • Method for lowering ultrahard multi-layer thin film residual stress based on high-intensity pulsed ion beam technique
  • Method for lowering ultrahard multi-layer thin film residual stress based on high-intensity pulsed ion beam technique

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Embodiment Construction

[0043] use figure 1 The TEMP-6 high-current pulsed ion beam device is shown, the TEMP-6 device uses a polymer anode unipolar pulse mode external magnetically insulated ion diode, and the beam density distribution is as follows figure 2 shown. Ion beam composition is 30% C n+ and 70%H + , the acceleration voltage is 300 ~ 350kV, the pulse width is 70ns, and the beam current density is adjusted according to the specific composition of the film. Superhard multilayer films with different compositions and different modulation periods were prepared by arc ion plating technology, and the phase structure of the films was measured by X-ray diffraction technology. Put the film into the irradiation chamber of the HIPIB device and evacuate to 10 -3 Pa, respectively choose different beam densities and different irradiation times to irradiate the film, the surface morphology, phase structure and grain size of the film after irradiation all change (such as Figure 4 and Figure 5 show...

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Abstract

The invention discloses a method for lowering the ultrahard multi-layer thin film residual stress based on a high-intensity pulsed ion beam technique, belonging to the technical field of material surface engineering. The method comprises the following steps of: generating C / H mixed ion beams with different energy densities and beam current densities by a high-intensity pulsed ion beam generating device; carrying out radiation processing on the multi-layer thin film for multiple times; comparing the variation of thin film residual stress before and after radiation; and determining the optimal radiation parameters for different types of thin films. The method is suitable for different types of homogeneous and nonhomogeneous ultrahard multi-layer thin films, the energy conversion efficiency is high, and the thin films have better energy deposition depth distribution; the device has a compact structure, a large radiation action area, and high influenced depth, the disposable area reaches more than 100cm<2> in a pulse, and the radiation influenced area is far greater than the ion range because of the momentum blowback effect; and because the radiation effect is omnibearing, the device is quite suitable for special-shaped workpieces, has high reliability, good repeatability, low cost, and a wide application prospect, and is efficient and energy-saving.

Description

technical field [0001] The invention relates to a method for reducing the residual stress of a superhard multilayer film based on a high-current pulsed ion beam technology, and belongs to the technical field of material surface engineering. Background technique [0002] Residual stress exists in almost all thin films prepared by PVD, CVD or electron deposition techniques, which has become a fundamental problem restricting the wide application of thin film materials. As for the method of improving the stress of the film, there are currently many literature reports on the use of corresponding technical means in the process of film preparation. So far, there is no method of improving the ultra-hard multilayer film after film formation based on the high-current pulsed ion beam technology at home and abroad. Relevant patents and reports on residual stress. The characteristics of the superhard multilayer film are: high hardness (above 40GPa); thin thickness (micron order); many l...

Claims

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Application Information

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IPC IPC(8): C23C14/58C23C16/56
Inventor 陈军林莉郝胜智林国强邢晶
Owner DALIAN UNIV OF TECH
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