Novel epitaxial device for producing silicon chips and system thereof
A technology of silicon wafer and epitaxy, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of reducing production and processing costs
Inactive Publication Date: 2012-01-25
郭志凯
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However, including the above cited patents, the current research focuses on the processing technology of silicon thin film solar cells, and there is little targeted research on the production equipment for epitaxy of a layer of high-purity single crystal silicon thin film on industrial silicon wafers
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[0024] The technical solution of the present invention will be further described below in conjunction with the drawings and specific embodiments.
[0025] See attached figure 1 , Attached figure 2 , Are respectively a side cross-sectional view and a front cross-sectional view of the reaction chamber in an embodiment of the present invention. In this embodiment, the reaction chamber includes a reaction isolation cover composed of an upper reaction gas partition 9 and a lower reaction gas partition 3, wherein the upper reaction gas partition 9 is in the shape of a door frame and is buckled on the lower reaction gas partition 3 The upper and lower reaction gas separators 3 are connected and closed, and at both ends, inlets and outlets for the silicon wafer carrier 1 to pass through are respectively reserved. The upper and lower reaction gas separators are made of quartz glass.
[0026] A halogen lamp group used to provide a heat source for the coating reaction is set above the react...
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Abstract
The invention discloses a novel epitaxial device for producing a silicon chip and a system comprising the device, which are applied to the field of single crystalline film production. The device comprises a reactor and a silicon chip carrying disc, wherein the reactor comprises a reaction isolation hood, a halogen lamp group is arranged above the reaction isolation hood, a transmission shaft is arranged below the reaction isolation hood, both ends of the reactor are provided with a gas inlet connector and a gas outlet connector communicated with the reaction isolation hood, the above parts are fixed through a reactor framework, the reaction isolation hood is a hood body made of quartz glass, and a reaction gas flows in the reactor; and the carrying disc for carrying the silicon chip enters the reaction isolation hood under the action of the transmission shaft, and a film is formed on the surface of the silicon chip under the irradiation of the halogen lamp group and the reaction of the reaction gas. One single crystalline film is extended on a substrate made of industrial silicon or silicon waste by using the device, and the production processing cost is lowered on the basis of ensuring high performance and stability of crystalline silicon solar cells.
Description
Technical field [0001] The invention relates to the production field of single crystal thin films, in particular to a new type of silicon wafer production epitaxial equipment and its system. Background technique [0002] The processing and manufacturing of solar cells is a key link in the solar industry chain. At present, solar cells are mostly silicon materials, including monocrystalline silicon wafers, polycrystalline silicon wafers and silicon thin film cells. [0003] Monocrystalline silicon cells have high conversion efficiency and mature technology. However, due to the high price of monocrystalline silicon materials and the cumbersome battery technology (drawing monocrystalline silicon requires a lot of energy and expensive high-purity quartz crucibles, etc.), the cost of monocrystalline silicon remains high. [0004] The production of polycrystalline silicon wafers currently uses the Siemens method and its improved methods in the world. However, the purity requirements for ...
Claims
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IPC IPC(8): C30B25/02C30B25/16C30B25/14C30B29/06H01L31/18
CPCY02P70/50
Inventor 晏小乐郭志凯
Owner 郭志凯