Method for manufacturing thin film transistor based on anodic oxidation insulating layer

A technology for oxidizing insulating layers and thin-film transistors, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of low conductivity and difficulty in meeting the needs of large-area preparation, and achieve low preparation temperature and suppression of hillocks. Good growth and uniformity

Inactive Publication Date: 2012-01-25
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The anode material of anodic oxidation is generally tantalum (Ta) or aluminum (Al), but the conductivity of Ta is low, it is difficult to meet the needs of large-area preparation, and the Al film produces more hillocks during the annealing process, which will affect the performance of the device. effects, so special measures are needed to avoid them

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  • Method for manufacturing thin film transistor based on anodic oxidation insulating layer
  • Method for manufacturing thin film transistor based on anodic oxidation insulating layer
  • Method for manufacturing thin film transistor based on anodic oxidation insulating layer

Examples

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Embodiment 1

[0047] In this embodiment, a thin-film transistor (a schematic diagram of its structure is shown in Figure 1A shown).

[0048] Wherein, the material of the glass substrate 10 is alkali-free glass with a thickness of 0.4 mm;

[0049] The material of the gate 11 is Al x Nd y (x=0.99, y=0.01), prepared by sputtering, the background vacuum of sputtering is better than 1×10 -3 Pa, argon gas pressure is 0.6Pa, power is 10W / cm 2 , with a thickness of 300nm, formed by photolithography;

[0050] The single oxidized insulating layer 12 is prepared by anodic oxidation. The electrolyte solution used in the anodic oxidation can be a mixture of ammonium tartrate and ethylene glycol. Put the prepared grid 11 substrate and stainless steel plate into the electrolyte solution as the anode respectively. and cathode, first apply a constant current of 0.1mA / cm between the anode and the cathode 2 , the voltage between the anode and the cathode will increase linearly with time, when the voltag...

Embodiment 2

[0055] In this embodiment, a thin-film transistor (a schematic diagram of its structure is shown in Figure 1A shown).

[0056] Wherein, the material of the glass substrate 10 is alkali-free glass with a thickness of 0.4mm;

[0057] The material of the gate 11 is Al x Nd y (x=0.97, y=0.03), prepared by sputtering, the background vacuum of sputtering is better than 1×10 -3 Pa, argon gas pressure is 0.6Pa, power is 10W / cm 2 , with a thickness of 300nm, formed by photolithography;

[0058] The single oxidized insulating layer 12 is prepared by anodic oxidation. The electrolyte solution used in the anodic oxidation can be a mixture of ammonium tartrate and ethylene glycol. Put the prepared grid 11 substrate and stainless steel plate into the electrolyte solution as the anode respectively. and cathode, first apply a constant current of 0.1mA / cm between the anode and the cathode 2 , the voltage between the anode and the cathode will increase linearly with time, when the voltage...

Embodiment 3

[0063] In this embodiment, a thin-film transistor (a schematic diagram of its structure is shown in Figure 1A shown).

[0064]Wherein, the material of the glass substrate 10 is alkali-free glass with a thickness of 0.4mm;

[0065] The material of the gate 11 is Al x Nd y (x=0.9, y=0.1), prepared by sputtering, the background vacuum of sputtering is better than 1×10 -3 Pa, argon gas pressure is 0.6Pa, power is 10W / cm 2 , with a thickness of 300nm, formed by photolithography;

[0066] The single oxidized insulating layer 12 is prepared by anodic oxidation. The electrolyte solution used in the anodic oxidation can be a mixture of ammonium tartrate and ethylene glycol. Put the prepared grid 11 substrate and stainless steel plate into the electrolyte solution as the anode respectively. and cathode, first apply a constant current of 0.1mA / cm between the anode and the cathode 2 , the voltage between the anode and the cathode will increase linearly with time, when the voltage re...

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Abstract

The invention discloses a method for manufacturing a thin film transistor based on an anodic oxidation insulating layer, comprising the steps of manufacturing a glass substrate, a grid electrode, a single oxidation insulating layer, a channel layer, a source electrode and a drain electrode. The grid electrode is arranged on the glass substrate, the single oxidation insulating layer covers the grid electrode, the channel layer is arranged on the insulating layer, and the source electrode and the drain electrode cover two ends of the channel layer respectively and are spaced mutually. The single oxidation insulating layer is manufactured by an anodic oxidation method, and a zinc-oxide-doped semiconductor is used as the material of the channel layer. The thin film transistor has the advantages of low manufacturing cost and temperature, lower threshold voltage, higher carrier mobility, high switching ratio and the like.

Description

technical field [0001] The invention relates to a method for preparing a thin film transistor based on an anodized insulating layer. The invention is applied in the fields of organic light-emitting display, liquid crystal display, electronic paper display and the like, and can also be used in the field of integrated circuits. Background technique [0002] In recent years, thin film transistors (TFTs) based on oxide semiconductors have attracted more and more attention in the field of flat panel displays, especially in the field of organic electroluminescent displays (OLEDs). At present, the semiconductor channel layer material of TFT used in flat panel display is mainly silicon material, including amorphous silicon (a-Si:H), polycrystalline silicon, microcrystalline silicon and the like. However, amorphous silicon TFT has light sensitivity and low mobility (<1cm 2 / Vs) and poor stability; although polysilicon TFT has high mobility, its electrical uniformity is poor due t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/288H01L21/336
Inventor 兰林锋彭俊彪王磊许伟曹镛徐苗邹建华陶洪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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