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Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof

A polycrystalline silicon ingot furnace and carbon material technology, which is applied in the direction of polycrystalline material growth, single crystal growth, crystal growth, etc., can solve the problems of not meeting the needs of long-term use, carbon pollution of silicon melt, deformation, etc.

Active Publication Date: 2012-04-11
江西硅辰科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, metal molybdenum will creep and deform at high temperatures above 1400°C, and there is also a hidden danger of molybdenum pollution, which cannot meet the needs of long-term use.
Therefore, so far, there is no suitable material to replace these carbon materials used in polysilicon ingot furnaces, and the problem of carbon pollution of silicon melts caused by carbon material components still exists

Method used

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  • Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof
  • Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof
  • Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0019] An anti-carbon pollution coating of carbon materials for polysilicon ingot furnaces, which is composed of silicon carbide. The preparation process is as follows: using silicon melt as the silicon source, and burying a graphite test block in a pure silicon raw material in a quartz crucible, The total amount of silicon material ensures that the graphite test block can be completely immersed in silicon melt after its melting. Heat this quartz crucible in an argon-protected resistance furnace to 1450°C to melt the silicon material, and then keep it for 20 minutes, then use a graphite clamp to clamp the graphite test block out of the melt. After the furnace is powered off, the graphite is cooled down. The test block is taken out of the furnace; HF-HNO with a volume ratio of 3: 1: 15 3 -H 2 O mixed acid solution dissolves and removes the remaining silicon on the surface of the graphite test block, and then rinses with deionized water to obtain it.

Embodiment 2

[0021] An anti-carbon pollution coating of carbon materials for polysilicon ingot furnaces. The composition is silicon carbide. The preparation process is as follows: using silicon melt as the silicon source, the carbon-carbon composite material test block is buried in a pure quartz crucible. In the silicon raw material, the total amount of silicon material ensures that the carbon-carbon composite material test block can be completely immersed in silicon melt after its melting. The quartz crucible was heated to 1450℃ in an argon-protected resistance furnace to melt the silicon material, and then kept for 20 minutes, then the carbon-carbon composite material test block was clamped out of the melt with a graphite clamp, and the furnace was powered off. After cooling, take the carbon-carbon composite test block out of the furnace; use HF-HNO with a volume ratio of 3: 1: 15 3 -H 2 The O mixed acid solution dissolves and removes the remaining silicon on the surface of the carbon-carb...

Embodiment 3

[0023] An anti-carbon pollution coating of carbon materials for polysilicon ingot casting furnaces. The composition is silicon carbide. The preparation process is: using silicon powder as the silicon source, mixing silicon powder with water, ethanol and polyethylene glycol into a slurry, and spraying On the graphite surface, after drying, heat it to 1460°C under the protection of argon in a resistance furnace for 60 minutes and then cool it down in the furnace.

[0024] The preparation method of the slurry is as follows: mixing silicon powder, water, ethanol, and polyethylene glycol in a weight ratio of 20:100:50:80, and stirring for 30 minutes.

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PUM

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Abstract

The invention relates to a carbon contamination-preventing coating of a carbon material for a polysilicon ingot furnace and a preparation process thereof. The component of the coating is silicon carbide, and the preparation process is in-situ growth on a carbon material surface through silicon-carbon interaction, and comprises the following steps: applying a uniformly-distributed silicon source on the carbon material surface, performing heat preservation at a high temperature to generate silicon-carbon interaction on the surface so as to form a silicon carbide layer in situ. The process of the invention can prepare a silicon carbide crystal coating which is dense and well combined with the carbon material, can effectively prevent contamination of the silicon material caused by carbon material temperature-resistant structural members during the production process of a polysilicon ingot furnace, and reduce the carbon content of the polysilicon ingot furnace.

Description

Technical field [0001] The invention relates to a carbon material surface coating and a preparation process thereof, in particular to an anti-carbon pollution coating on the surface of a carbon material component for a polysilicon ingot furnace and a preparation process thereof. Background technique [0002] More than 85% of the modern photovoltaic industry is based on crystalline silicon wafer solar cells, of which more than half are based on polycrystalline silicon wafer solar cells. The required polycrystalline silicon wafer is made by cutting the directionally solidified polycrystalline silicon ingot. In the production process, the polysilicon ingot furnace involves high temperatures above 1500°C, so carbon materials, including graphite and carbon-carbon composite materials, are commonly used in the polysilicon ingot furnace to manufacture temperature-resistant structural parts. For many years, the industry has recognized that the surface of carbon material structural parts ...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B28/00C30B28/06
Inventor 周浪
Owner 江西硅辰科技有限公司
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