Method for etching metal molybdenum material

A metal, dry etching technology, applied in metal material coating process, process for producing decorative surface effects, coating and other directions, can solve the problems of low etching process rate and poor anisotropy

Active Publication Date: 2012-04-18
苏州含光微纳科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there is no relevant report on MEMS devices fabricated using metal molybdenum bulk materials as the main structure, and the etching process rate of existing molybdenum materials is generally low,

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  • Method for etching metal molybdenum material
  • Method for etching metal molybdenum material
  • Method for etching metal molybdenum material

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Embodiment Construction

[0019] The present invention will be further described below by embodiment, but this is not limitation of the present invention, those skilled in the art can make various modifications or improvements according to the basic idea of ​​the present invention, but as long as not departing from the basic idea of ​​the present invention, all within the scope of the present invention.

[0020] 1. Preparation of etching mask:

[0021] Such as figure 1 As shown, the negative photoresist SU-83050 is used as the mask material, and the substrate 1 of the surface-polished high-purity wafer-grade metal molybdenum is cleaned with acetone alcohol and dried, and then coated with a layer of Negative-tone photoresist 2 with a thickness of 60 μm, such as figure 1 (a) shown. After the photoresist 2 is pre-baked, exposed, post-baked, and developed to be patterned, an etching mask 2' with a desired etching pattern is obtained, see figure 1 (b).

[0022] 2. Etching:

[0023] Trion Technology Mi...

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Abstract

The invention discloses a method for etching a metal molybdenum material. The method comprises the following steps of: forming an etching mask on the metal molybdenum material; and generating high-density and high-energy ions and free radicals by adopting a high-density plasma (such as ICP (Inductively Coupled Plasma), TCP (Transformer Coupled Plasma) and the like) dry etching process to realize high-speed and anisotropic etching of the metal molybdenum material. The etching speed can be up to 2.63 microns per minute, and the vertical degree of an etching result side wall can be up 70 degrees. On the basis of the method disclosed by the invention, a metal molybdenum substrate can be taken as a main body material for preparing an MEMS (Micro Electro Mechanical System) device.

Description

technical field [0001] The invention belongs to the technical field of micro-electro-mechanical systems (MEMS), in particular to a method for anisotropic and high-speed etching of metal molybdenum body materials. Background technique [0002] In the processing and manufacturing of MEMS devices, single crystal silicon materials are usually used as traditional structural substrate materials, and single crystal silicon materials have some inherent defects, such as high brittleness and poor impact resistance; compared with metal materials, their conductivity is poor and their resistivity is low. High; the thermal stability is relatively poor, and the Young's modulus will change significantly when it exceeds 600 ° C, which is not suitable for application under high temperature conditions, which affects the application range of the device. [0003] Metal molybdenum material has the characteristics of high melting point (2610°C), high strength, high hardness and low resistivity. M...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 陈兢胡佳张轶铭陈书慧李男男罗进
Owner 苏州含光微纳科技有限公司
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