Viral disease diagnosis device and method based on field effect transistor

A field-effect transistor and diagnostic device technology, which is applied to measurement devices, material analysis by electromagnetic means, instruments, etc., to achieve the effect of simple and easy construction method and antibody connection method, easy miniaturization, and flexible and changeable construction materials.

Inactive Publication Date: 2012-05-02
HUNAN UNIV
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can solve the shortcomings of the existing traditional methods, and it is simpler, cheaper, faster and more portable to diagnose viral infectious diseases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Viral disease diagnosis device and method based on field effect transistor
  • Viral disease diagnosis device and method based on field effect transistor
  • Viral disease diagnosis device and method based on field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 2

[0038] Based on SnO 2 Avian influenza virus diagnostic device for nanowire transistor biochip:

[0039] (1) Synthesize SnO as a field effect transistor channel by hydrothermal method or CVD (Chemical Vapor Deposition) 2 One-dimensional metal oxide materials such as nanowires.

[0040] (2) The insulating gate layer of the field effect transistor is a layer of dense silicon dioxide on the silicon substrate.

[0041] (3) SnO by photolithography and magnetron sputtering 2 Metal electrodes are prepared at both ends of the nanowire as the source and drain, and then the silicon dioxide layer is scraped off on the edge of the chip to expose the silicon substrate to make the gate.

[0042] (3) SnO 2 The nanowire device was cleaned with ethanol and acetone, and then the channel part was treated with a mixed solution of hydrogen peroxide and ammonia for 10 minutes. Then the GPTMS solution was added dropwise on the channel to react for 3 hours. Add the bird flu H5N1 virus antibody d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a quick diagnosis device for a viral communicable disease based on a field effect transistor, which is composed of three parts, i.e., a field effect transistor biological chip, a microfluid channel sample introduction encapsulation system and an electronic detection system. A source electrode, a drain electrode and a semiconductor channel between the source electrode and the drain electrode are constructed on a silicon substrate by utilizing a semiconductor manufacturing process; and a covalent modification silane reagent on the channel is taken as a connection molecule for connecting viral antibodies; then a microfluid channel made from polydimethylsiloxane is used to be encapsulated in tight fit with the silicon substrate; finally the source electrode and the drain electrode are connected with a set of a signal detection system, so that a person or an animal can be diagnosed whether to be infected with the viral disease quickly, accurately and sensitively. The quick diagnosis device is a portable epidemic communicable disease detection instrument.

Description

technical field [0001] The invention relates to a device and a detection method for rapidly diagnosing human or animal viral infectious diseases by using field effect transistors. Background technique [0002] The global spread of highly infectious viral diseases such as avian influenza virus and SARS virus has greatly threatened the lives and health of humans and animals. For example, avian influenza (Avian influenza, AI) is an infectious disease of poultry caused by influenza A virus of the Orthomyxoviridae family, and is listed as a severe infectious disease of type A by the International Veterinary Bureau and the World Health Organization (WHO). Avian influenza virus is distributed worldwide, and almost all wild and domesticated birds can be infected. It is believed that avian is a natural and huge reservoir of influenza virus genes, and is an important material basis for the origin of new subtypes of influenza A virus. The virulence of different strains is very differe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
Inventor 徐成李秋红许志张恩迪陈立宝王太宏
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products