A kind of preparation method and application of mgzno film
A thin-film, 180-min technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of high target cost and MgZnO thin film crystal quality decline, and achieve simple and precise control of band gap. , the effect of saving materials
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[0017] see figure 1 , showing a method for preparing a MgZnO thin film according to an embodiment of the present invention, which includes the following steps:
[0018] Step 1, the preparation of the target material, mixing MgO and ZnO powder, sintering as the target material, the molar ratio of MgO and ZnO is 0.15-1.2;
[0019] Step 2, deposition of thin film, put the MgZnO target into the magnetron sputtering cavity, vacuumize, set the substrate temperature to 500°C-800°C, the inert gas flow rate to 15sccm-25sccm, and the pressure to 0.6Pa-1.6 Pa, sputtering power 60W ~ 160W, deposition time 60min ~ 240min.
[0020] In step 1, MgO and ZnO are uniformly mixed, for example, sintered at a temperature of 1000° C. to 1200° C. to obtain MgZnO ceramics. The content of MgO has a great relationship with the performance of the MgZnO film. The higher the content of Mg, the more the wavelength position of the absorption edge of the transmission spectrum of the film moves to the short-...
Embodiment 1
[0026] Select MgO:ZnO=2:8 (molar ratio) powder, after uniform mixing, sinter at 1000°C to form a Ф60×2mm ceramic target, and put the target into a vacuum chamber. The quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 80mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the substrate temperature was raised to 650° C., 20 sccm of argon was introduced, the pressure was adjusted to 1.0 Pa, the deposition time was 240 min, and the obtained film thickness was 320 nm.
Embodiment 2
[0028] Select MgO:ZnO=2:8 (molar ratio) powder, after uniform mixing, sinter at 1000°C to form a Ф60×2mm ceramic target, and put the target into a vacuum chamber. The quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 80mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the substrate temperature was raised to 650° C., 20 sccm of argon gas was introduced, the pressure was adjusted to 1.0 Pa, the deposition time was 180 min, and the obtained film thickness was 160 nm.
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