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Method for manufacturing special-shaped chip through laser cutting

A technology of laser cutting and manufacturing methods, which is applied in manufacturing tools, laser welding equipment, semiconductor/solid-state device manufacturing, etc., can solve the problems of triangular chips with no use value and material waste, and achieve fast, efficient and simple processing, no material waste, The effect of high processing efficiency

Inactive Publication Date: 2012-05-16
SUZHOU TIANHONG LASER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the hexamorphic chips obtained by this cutting method, there is a triangular chip sandwiched between the three hexamorphic chips connected in each phase. This triangular chip has no use value, resulting in a serious waste of materials.

Method used

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  • Method for manufacturing special-shaped chip through laser cutting
  • Method for manufacturing special-shaped chip through laser cutting
  • Method for manufacturing special-shaped chip through laser cutting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Fix the GPP semiconductor silicon wafer 3 with a circular glass passivation chip pattern on the semiconductor silicon wafer 3 on the workbench 4 through a vacuum chuck. Then, the charge-coupled device image sensor 2 device assists positioning, and the laser beam emitted by the gas laser 5 is used to irradiate the semiconductor wafer vertically, and the operation of the workbench 4 is controlled by software.

[0037] Specifically, the operator can set wafer parameters on the control software, including the size and diameter of the special-shaped wafer to be obtained. At the same time, the parameters of the laser beam can be set, including laser power, laser frequency, and laser pulse width. Moreover, the motion control parameters of the workbench 4 can also be set, including scribing speed, acceleration, deceleration and so on. Once, the workbench 4 is made to move relative to the laser beam according to the circular glass passivation chip pattern on the semiconductor s...

Embodiment 2

[0041] Fix the GPP semiconductor silicon wafer 3 with a circular glass passivation chip pattern on the semiconductor silicon wafer 3 on the workbench 4 through a vacuum chuck. Then, the charge-coupled device image sensor 2 device assists positioning, and the laser beam emitted by the semiconductor laser is used to irradiate the semiconductor wafer vertically, and the operation of the workbench 4 is controlled by software.

[0042]Specifically, the operator can set wafer parameters on the control software, including the size and diameter of the special-shaped wafer to be obtained. At the same time, the parameters of the laser beam can be set, including laser power, laser frequency, and laser pulse width. Moreover, the motion control parameters of the workbench 4 can also be set, including scribing speed, acceleration, deceleration and so on. Once, the workbench 4 is made to move relative to the laser beam according to the circular glass passivation chip pattern on the semicond...

Embodiment 3

[0046] Fix the GPP semiconductor silicon wafer 3 with a circular glass passivation chip pattern on the semiconductor silicon wafer 3 on the workbench 4 through a vacuum chuck. Then, the charge-coupled device image sensor 2 device assists in positioning, and the laser beam emitted by the fiber laser is vertically irradiated on the semiconductor wafer, and the operation of the workbench 4 is controlled by software.

[0047] Specifically, the operator can set wafer parameters on the control software, including the size and diameter of the special-shaped wafer to be obtained. At the same time, the parameters of the laser beam can be set, including laser power, laser frequency, and laser pulse width. Moreover, the motion control parameters of the workbench 4 can also be set, including scribing speed, acceleration, deceleration and so on. Once, the workbench 4 is made to move relative to the laser beam according to the circular glass passivation chip pattern on the semiconductor si...

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Abstract

The invention relates to a method for manufacturing a special-shaped chip through laser cutting, which is characterized in that: firstly, a semiconductor silicon wafer needed to be cut is positioned through the match of a computer system and a charge coupled device image sensor; secondly, laser beams are adopted to be vertically irradiated on the surface of the semiconductor silicon wafer; thirdly, a workbench for load bearing the semiconductor silicon wafer is moved so as to be moved relatively to the laser beams; and finally, the laser beams are used for cutting the semiconductor silicon wafer in a melting and vaporizating manner according to set parameters so as to obtain the special-shaped chip. Therefore, mechanical stress cannot be generated in the process, so that the semiconductor chip to be processed cannot be damaged, and the semiconductor chip can be processed quickly, high-efficiently, simply and conveniently.

Description

technical field [0001] The invention relates to a wafer cutting and manufacturing method, in particular to a laser cutting and manufacturing method for special-shaped wafers. Background technique [0002] At present, the process of manufacturing silicon rectifier devices in the semiconductor industry mostly uses diffused silicon wafers or glass-passivated GPP chips to cut with grinding wheel blades to form hundreds of square chips or linear hexagonal chips. Due to the cutting of the grinding wheel blade, it can only cut continuous straight lines, but not curves and arcs. [0003] Generally, the traditional manufacturing process of special-shaped chips with existing graphics includes positioning and gluing of wafers and mask iron sheets. Fix it on the glass liner with white wax melted on the surface, and make the white wax cover the whole surface of the wafer, then stick the adhesive tape with several small round iron pieces on the wafer correctly through the white wax, and ...

Claims

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Application Information

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IPC IPC(8): H01L21/78B23K26/36B23K26/08B23K26/38
Inventor 赵宇
Owner SUZHOU TIANHONG LASER
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