Electroplating method of deep blind hole
A technology of deep blind holes and blind holes, which is applied in the direction of circuits, semiconductor devices, etc., to achieve the effect of mature technology
Inactive Publication Date: 2012-06-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0008] In view of this, the main purpose of the present invention is to provide a method for electroplating deep blind holes, to solve the problem of deep blind hole electroplating, to meet the electroplating of back gold of integrated electroplating, especially in the heat dissipation of high-power integrated circuits needs
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0035] The method for electroplating deep blind holes provided by the present invention controls the exchange of solutions by controlling the intensity of stirring gas and spraying solution, and then controls the speed of metal deposition. The method mainly includes:
[0036] Step 1: cleaning the semiconductor substrate; the blind hole depth of the semiconductor substrate material is ≤120um, and the blind hole diameter is ≥40um.
[0037] Step 2: growing a dielectric layer on the semiconductor substrate by evaporation, sputtering or chemical vapor deposition (CVD) as an etching stopper layer.
[0038] Step 3: Coating a layer of photoresist on the etching barrier layer, then exposing and developing, and photoetching the are...
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Abstract
The invention discloses an electroplating method of a deep blind hole. The invention is suitable to be used in electroplating of metals such as gold, nickel, copper, and silver, and alloys thereof in the deep blind hole. The method comprises steps that: a semiconductor chip is washed; an etching barrier layer is grown on the semiconductor chip; photoresist is coated on the barrier layer; the semiconductor chip is exposed and developed; a corrosion zone is etched by photo-etching; areas on the barrier layer that are not covered by the photoresist are etched by using a dry method, a wet method, and the like; the photoresist is removed by using ethanol and acetone; a required depth is etched by using ICP, and superfluous barrier layer is removed; an initial plating coat is evaporated or sputtered; the gas and solution intensities required by spray plating are adjusted according to the depth and the width of the blind hole. The method assists in solving a deep blind hole electroplating problem. With the method, the requirements of back metal electroplating of integrated circuits, and especially the requirements of large-power integrated circuit heat dissipation, are satisfied.
Description
technical field [0001] The invention relates to the technical field of integrated circuit electroplating, in particular to a method for electroplating deep blind holes. Background technique [0002] With the development of integrated circuits, the size of the metal interconnection system in integrated circuits has decreased sharply, the number of layers of metal wiring has gradually increased, and individual devices have become smaller and smaller, which has resulted in thinner and thinner device interconnection lines. , under the condition of high current passing, the heat dissipation of the device is the main problem that needs to be solved. If the generated heat cannot be solved in time, in the short term, as the temperature rises, the resistivity of the metal connection will continue to increase, which will greatly increase The signal delay on the metal wiring is greatly improved, so that it is difficult to obtain the expected speed performance. If the device works for a...
Claims
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IPC IPC(8): C25D7/12C25D5/08
Inventor 刘焕明周静涛杨成樾李博刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI