Solar cell and preparation method thereof
A technology of solar cells and sheet resistance, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to accurately control the concentration of doping ions, low conversion efficiency of solar cells, complicated process steps, etc., and improve the conversion efficiency of solar energy. , The effect of improving the utilization rate and improving the conversion efficiency
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[0046] reference Figure 1-Figure 8 , The method for preparing the solar cell of the present invention is introduced in detail, which includes the following steps:
[0047] reference figure 1 , Step S 1 The P+ type doped layer 2 is formed on the backside of the wafer of the P type substrate 1. Those skilled in the art can select a suitable doping layer formation process according to actual needs, such as accelerating P type ions and forming the P+ type by ion implantation. In the doped layer 2, the P-type ions are accelerated to 500eV-50keV, and the sheet resistance of the formed P+-type doped layer is 20-60Ω / □. Those skilled in the art can select appropriate doping ions and the concentration and energy of doping ions according to actual needs to obtain ideal sheet resistance. For example, P-type ions are accelerated to 1keV-40keV, preferably, P-type ions are accelerated to 5keV-30keV; the sheet resistance of the formed P+ type doped layer is 25-55Ω / □, preferably, the formed P+ ...
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[0064] Example 1
[0065] reference figure 1 , Step S 1 , The P+ type doped layer 2 is formed on the backside of the wafer of the P type substrate 1. In this embodiment, the P type ions are accelerated and the P+ type doped layer 2 is formed by ion implantation, wherein the boron ions are accelerated to 500 eV to form The sheet resistance of the P+ type doped layer is 20Ω / □. Since the ion implantation method is used to form the P+ type doped layer, an annealing step is required, figure 1 The arrow in the middle shows the direction of ion implantation, which is only for ease of understanding and should not be interpreted as a limitation of the present invention. After the ion implantation is completed, annealing is performed to activate the doped impurities.
[0066] reference Figure 2-3 , Step S 2 , An N-type doped layer 3 is formed on the wafer surface of the P-type substrate 1, wherein the N-type doped layer 3 is formed by a thermal diffusion method, and the sheet resistance ...
Example Embodiment
[0071] Example 2
[0072] reference figure 1 , Step S 1 , The P+ type doped layer 2 is formed on the backside of the wafer of the P type substrate 1. In this embodiment, the P type ions are accelerated and the P+ type doped layer 2 is formed by ion implantation, in which the boron ions are accelerated to 50 keV. The sheet resistance of the P+ type doped layer is 60Ω / □. Since the ion implantation method is used to form the P+ type doped layer, an annealing step is required, figure 1 The arrow in the middle shows the direction of ion implantation, which is only for ease of understanding and should not be interpreted as a limitation of the present invention. After the ion implantation is completed, annealing is performed to activate the doped impurities.
[0073] reference Figure 2-3 , Step S 2 An N-type doped layer 3 is formed on the wafer surface of the P-type substrate 1, wherein the N-type doped layer 3 is formed by a thermal diffusion method. The sheet resistance of the N-typ...
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