Method for cleaning solar cell silicon wafers
A technology for solar cells and solar silicon wafers, which is applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., and can solve the problems of inability to completely remove moisture on the surface of silicon wafers, incomplete air drying of silicon wafers, and variable production cycles. To simplify cleaning equipment and cleaning process, save cleaning energy consumption, and improve equipment productivity
Inactive Publication Date: 2012-06-20
宁波市鑫友光伏有限公司
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AI Technical Summary
Problems solved by technology
[0004] In the prior art, water-soluble cleaning is mostly used. One of the disadvantages is that the surface moisture of the silicon wafer cannot be completely removed after being slowly pulled by deionized water. Thoroughly or there are water marks; the second disadvantage is that circulating water is used for slow pulling of pure water, so that the water temperature is difficult to control, and the equipment manufacturing is also more complicated. Pollution of silicon wafers, leading to unqualified; the third disadvantage is usually to ensure that the silicon wafers can be fully dried, this link usually requires 2-4 stations to dry with hot air, which makes the production cycle longer
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment 2
[0017] The water cutting agent provided in this example is composed of 15 parts of 1,2-dimethoxyethane, 60 parts of n-pentane, 40 parts of n-nonane and 15 parts of octylphenol polyoxyethylene ether. The water cutting agent is placed in the cleaning equipment with ultrasonic cleaning. After the silicon wafers to be cleaned are ultrasonically cleaned in the provided water cutting agent for 5 minutes, they are transported to 50°C for hot air drying.
Embodiment 3
[0019] The water cutting agent described in this embodiment is composed of 10 parts of 1,2-dimethoxyethane, 50 parts of n-pentane, 30 parts of n-nonane and 10 parts of octylphenol polyoxyethylene ether. The cleaning and drying process is as in Example 2.
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The invention discloses a method for cleaning solar cell silicon wafers, which comprises steps of cleaning and drying. The method is characterized in that the cleaning step includes adopting water replacement cleaning agent to clean surfaces of the solar cell silicon wafers, and the water replacement cleaning agent includes from 5 to 15 parts of 1, 2- dimethoxyethane, from 40 to 60 parts of n-pentane, from 20 to 40 parts of nonane and from 5 to 15 parts of ethoxylated octyl phenol. In a cleaning process, the water replacement cleaning agent can be placed in cleaning equipment with an ultrasonic cleaning function, and the wafers to be cleaned are dried by hot air after being ultrasonically cleaned in the provided water replacement cleaning agent. The method for cleaning the solar cell silicon wafers achieves purposes of optimizing cleaning process, simplifying the cleaning equipment, shortening silicon wafer cleaning time, saving energy consumption and reducing cost by the aid of water shearing and dewatering characteristics of the water replacement cleaning agent.
Description
technical field [0001] The invention relates to a production technology of solar silicon wafers, in particular to a method for cleaning solar battery silicon wafers. Background technique [0002] Solar energy is an inexhaustible clean energy. People have used solar energy for a long time. With the appearance of solar cells, the use of solar energy has reached a new level. With the rapid development of the photovoltaic industry, people have higher and higher requirements for cost control and product quality. In the manufacturing process of solar cells, the pollutants on the surface will directly affect the quality, efficiency, yield, high-quality product rate and conversion efficiency of texturing. Therefore, the cleaning of silicon wafers has attracted more and more attention. Many companies are improving the cleaning process. [0003] The pollutants on the surface of the silicon wafer usually exist in the surface of the silicon wafer or its own oxide film in the form of ...
Claims
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Login to View More IPC IPC(8): B08B3/08B08B3/12H01L21/02H01L31/18
CPCY02P70/50
Inventor 庞井明张云国俞英芸张立波石义洋
Owner 宁波市鑫友光伏有限公司
