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Preparation method of nanometer light-emitting material with CdS/Cr-doped structure

A nano-luminescent material and airflow direction technology, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., to achieve the effects of easy operation, strong process controllability and low cost

Inactive Publication Date: 2012-06-27
ZHEJIANG TIANXU TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of physical vapor deposition to prepare CdS / Cr doped structure nanorod-shaped luminescent materials has not been reported yet.

Method used

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  • Preparation method of nanometer light-emitting material with CdS/Cr-doped structure
  • Preparation method of nanometer light-emitting material with CdS/Cr-doped structure
  • Preparation method of nanometer light-emitting material with CdS/Cr-doped structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Weigh a certain amount of CdS powder and Cr powder with a molar ratio of 1:1, mix them in an agate mortar, and grind them for 15 minutes to make them evenly mixed. Put the ground mixture into a quartz boat, take 5 pieces of gold-plated Si slices, each Si slice is 1cm apart, and place them on the other side of the quartz boat along the direction of the gas, and put the reactant quartz boat into the heating area, the Si sheet is placed in the deposition area (such as figure 1 ). Vacuumize the reaction device first, and then pass argon to an atmospheric pressure; evacuate the vacuum to below -0.08MPa in a cycle operation, and pass argon twice; adjust the argon flow rate to 350sccm to make it stable, and then adjust the temperature of the heating furnace Regulator, set the reaction temperature to 900°C and the reaction time to 30 minutes. Deposited products were obtained on Si wafers.

[0029] The resulting product was directly observed under a scanning electron microsco...

Embodiment 2

[0031] As in Example 1, a certain amount of CdS powder and Cr powder were weighed, mixed in an agate mortar, and ground for 15 minutes to make them evenly mixed. Put the ground mixture into a quartz boat, take 5 pieces of gold-plated Si slices, each Si slice is 1cm apart, and place them on the other side of the quartz boat along the direction of the gas, and put the reactant quartz boat into the heating area, the Si sheet is placed in the deposition area (such as figure 1 ). Vacuumize the reaction device first, and then pass argon to an atmospheric pressure; evacuate the vacuum to below -0.08MPa in a cycle operation, and pass argon twice; adjust the argon flow rate to 350sccm to make it stable, and then adjust the temperature of the heating furnace Regulator, set the reaction temperature to 900°C and the reaction time to 40 minutes. Deposited products were obtained on Si wafers. The morphology, structure, element composition and luminescent properties of the product are the...

Embodiment 3

[0033] As in Example 1, a certain amount of CdS powder and Cr powder were weighed, mixed in an agate mortar, and ground for 15 minutes to make them evenly mixed. Put the ground mixture into a quartz boat, take 5 pieces of gold-plated Si slices, each Si slice is 1cm apart, and place them on the other side of the quartz boat along the direction of the gas, and put the reactant quartz boat into the heating area, the Si sheet is placed in the deposition area (such as figure 1 ). Vacuumize the reaction device first, and then pass argon to an atmospheric pressure; evacuate the vacuum to below -0.08MPa, and pass argon 3 times in a cycle operation; adjust the argon flow rate to 350 sccm to make it stable, and then adjust the temperature of the heating furnace Regulator, set the reaction temperature to 910°C and the reaction time to 30 minutes. Deposited products were obtained on Si wafers. The morphology, structure, element composition and luminescent properties of the product are ...

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Abstract

The invention relates to a preparation method of an inorganic nanometer material, in particular to a preparation method of a material with a cadmium sulfide / chromium-doped structure. The preparation method comprises the following steps of: after CdS powder is uniformly mixed with Cr powder by adopting a physical vapor deposition method, placing into a quartz boat, then placing a gold-plated Si chip below the quartz boat along the airflow direction and heating the position of the quartz boat to 890-910 DEG C after vacuum pumping; and finally obtaining a product after cooling. The preparation method has the advantages of strong process controllability, easiness for operation, low cost and high purity of the obtained product. The product prepared by the preparation method can be widely applied to the semiconductor industry.

Description

technical field [0001] The invention relates to a preparation method of an inorganic nanometer material, in particular to a preparation method of a cadmium sulfide / chromium doped structural material. technical background [0002] As a typical II-VI semiconductor nanomaterial, nano-CdS has a bandgap up to 2.42eV and exhibits many unique photoelectric properties. It is widely used in many fields such as light-emitting diodes, electroluminescence, sensors, infrared window materials, and photocatalysis. Applications. At present, the methods for preparing CdS nanomaterials mainly include template method, physical vapor deposition method, chemical liquid phase method, solid phase method and so on. Physical vapor deposition method - also known as evaporation condensation method, is to use vacuum evaporation, laser, arc high-frequency induction, electron beam irradiation and other methods to vaporize raw materials or form plasma, and then quench them in the medium to condense them....

Claims

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Application Information

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IPC IPC(8): C09K11/68C09K11/56
Inventor 陈春晖
Owner ZHEJIANG TIANXU TECH
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