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A method for preparing epitaxial gd2-xlaxo3 gate dielectric film by mocvd

A technology of gate dielectric and thin film, which is applied in the field of preparing epitaxial Gd2-xLaxO3 metal oxide gate dielectric thin film, and achieves the effect of simple process

Inactive Publication Date: 2014-10-22
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, no record has been found in the prior art for the preparation of epitaxial Gd by MOCVD. 2-x La x o 3 Report on Metal Oxide Gate Dielectric Thin Films

Method used

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  • A method for preparing epitaxial gd2-xlaxo3 gate dielectric film by mocvd
  • A method for preparing epitaxial gd2-xlaxo3 gate dielectric film by mocvd
  • A method for preparing epitaxial gd2-xlaxo3 gate dielectric film by mocvd

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Experimental program
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Effect test

Embodiment 1

[0022] 1) After cleaning the (100) Si substrate with standard RCA semiconductor cleaning process, soak it in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the surface of the Si substrate. Hydrogen in the hydrofluoric acid solution The volume ratio of hydrofluoric acid to deionized water is 1:8-10.

[0023] 2) Move the cleaned substrate into the MOCVD reaction chamber, and deposit Gd on the Si substrate 2-x La x o 3 Metal oxide thin film, Gd source and La source are tetramethylheptadione gadolinium Gd(dpm) respectively 3 and lanthanum tetramethylheptanedionate La(dpm) 3 , Gd source temperature 150 o C, the flow rate is 100sccm, the deposition time is 5 minutes; the La source temperature is 205 o C, the flow rate is 200 sccm, the deposition time is 45 minutes, the metal source carrier gas is argon; the reaction gas is oxygen, the flow rate is 100 sccm, the reaction chamber pressure is 15 Torr; the deposition tempera...

Embodiment 2

[0026] 1) After cleaning the (100) Si substrate with the standard RCA semiconductor cleaning process, soak it in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the substrate surface. Hydrogen fluoride in the hydrofluoric acid solution The volume ratio of acid to deionized water is 1:8-10.

[0027] 2) Move the cleaned substrate into the MOCVD reaction chamber and deposit Gd on the substrate 2-x La x o 3 Metal oxide thin film, Gd source and La source are tetramethylheptadione gadolinium Gd(dpm) respectively 3 and lanthanum tetramethylheptanedionate La(dpm) 3 , Gd source temperature 145 o C, flow rate is 360sccm, deposition time is 30 minutes; La source temperature is 185 o C, the flow rate is 40 sccm, the deposition time is 30 minutes, the metal source carrier gas is nitrogen; the reaction gas is oxygen, the flow rate is 100 sccm, the reaction chamber pressure is 20 Torr; the deposition temperature is 550 o c.

[0...

Embodiment 3

[0030] 1) After cleaning the (100) Si substrate with standard RCA semiconductor cleaning process, soak it in a diluted hydrofluoric acid solution at room temperature for 3 to 6 minutes to remove the oxide layer on the surface of the Si substrate. Hydrogen in the hydrofluoric acid solution The volume ratio of hydrofluoric acid to deionized water is 1:8-10.

[0031] 2) Move the cleaned substrate into the MOCVD reaction chamber, and deposit Gd on the Si substrate 2-x La x o 3 Metal oxide thin film, Gd source and La source are tetramethylheptadione gadolinium Gd(dpm) respectively 3 and lanthanum tetramethylheptanedionate La(dpm) 3 , Gd source temperature 155 o C, the flow rate is 40sccm, the deposition time is 20 minutes; the La source temperature is 195 o C, the flow rate is 360 sccm, the deposition time is 20 minutes, the metal source carrier gas is argon; the reaction gas is oxygen, the flow rate is 100 sccm, the reaction chamber pressure is 10Torr; the deposition temperat...

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Abstract

The invention discloses a method for preparing an epitaxial Gd2-xLaxO gate dielectric film by MOCVD (Metal Organic Chemical Vapor Deposition). The method comprises the following steps of: firstly, cleaning a Si substrate (100); moving the cleaned substrate into a MOCVD reaction chamber; depositing a Gd2-xLaxO3 metallic oxide film on the Si substrate by the MOCVD method by adopting 2,2,6,6-tetramethyl-3,5-heptanedione gadolinium (Gd (dpm) 3) and 2,2,6,6-tetramethyl-3,5-heptanedione lanthanum (La (dpm) 3) as a Gd source and a La source respectively; and placing the substrate with the deposited film in a short annealing furnace for annealing, and then obtaining a finished product. According to the method, the MOCVD process is adopted, the epitaxial Gd2-xLaxO3 gate dielectric film (111) is prepared on the Si substrate (100) successfully. In the method, the process is simple, and the epitaxial Gd2-xLaxO3 dielectric film has an important application prospect in the microelectronic filed.

Description

technical field [0001] The invention relates to a method for preparing a metal oxide gate dielectric film by MOCVD, in particular to a method for preparing epitaxial Gd 2-x La x o 3 A method for metal oxide gate dielectric films. Background technique [0002] With the rapid development of the semiconductor industry, SiO has been used in Metal-oxide-semiconductor field-effect transistors (MOSFETs) technology 2 as gate dielectric material. With the improvement of integration, the feature size of the device is continuously reduced, and the thickness of the gate oxide layer is getting thinner and thinner. The resulting problems of tunneling current and device failure make the use of high dielectric constant gate dielectric materials instead of SiO 2 It has become one of the research hotspots of current microelectronics technology. [0003] Rare earth oxides are high-k dielectric materials that have attracted people's attention. Among them, Gd 2 o 3 It has a large band ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/22C23C16/40
Inventor 李爱东黄柳英刘晓杰付盈盈吴迪
Owner NANJING UNIV