Hot compression chip low-temperature interconnection method using indium and micro needle cone structures
A thermal compression technology using indium, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult removal of flux residues, achieve low bonding residual stress, lower process temperature, and less defects such as interface micro-holes Effect
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[0034] Below in conjunction with specific embodiment the present invention is described in further detail:
[0035] The low-temperature interconnection method of thermally compressed chips using indium and microneedle cone structures disclosed by the present invention has the following steps:
[0036](1) Preparation of nickel microneedle cone layer: The metal block in the chip pad area was cleaned of surface contamination by chemical degreasing treatment for about 30-60 s, and then immersed in 20 wt.% sulfuric acid for about 10 s to improve surface activity. Electrodeposition is used to prepare nickel needle cones, and the electrolyte composition used is: NiCl 2 120 g / L, H 3 BO 3 40 g / L, crystal regulator 200 g / L. Electrodeposition conditions are: bath temperature 60°C, pH=4, current density 2.0 A / dm 2 , the deposition time is 12 min.
[0037] (2) Indium layer preparation: The chip that has completed the above step (1) is immediately prepared for the indium layer. The f...
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