Silicon germanium heterojunction NPN (negative-positive-negative) transistor and manufacture method

Abstract

The invention discloses a silicon germanium heterojunction NPN (negative-positive-negative) transistor. A collector region is formed in an active region, is connected with N-type pseudo buried layers at the bottoms of shallow trench field oxides on two sides of the active region and is led out through deep-hole contacts, an emitter window is formed through outer spacers, a P-type silicon germanium epitaxial layer at the bottom of the emitter window is an intrinsic base region, outer base regions are formed on the P-type silicon germanium epitaxial layer outside the emitter window through further impurity doping by means of ion implantation, the outer spacers can prevent ions of the outer base regions from influencing the intrinsic base region, an emitter region consists of N-type polycrystalline silicon which is completely filled into the emitter window and extends out of the emitter window from the top of the emitter window. The invention further discloses a manufacture method for the silicon germanium heterojunction NPN transistor. The silicon germanium heterojunction NPN transistor has the advantages that the dimension of the transistor can be reduced, parasitic resistance can be reduced, characteristic frequency can be improved, the process flow can be simplified, use of photomasks is decreased, cost is reduced, and the process dimension is accurately controlled.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a germanium-silicon heterojunction NPN transistor; the invention also relates to a manufacturing method of the germanium-silicon heterojunction NPN transistor. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Silicon germanium ...

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Problems solved by technology

The device technology is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of

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