Silicon germanium heterojunction NPN (negative-positive-negative) triode and manufacture method

Abstract

The invention discloses a silicon germanium heterojunction NPN (negative-positive-negative) triode. A collector region is formed in an active region, is connected with N-type pseudo buried layers formed at the bottoms of shallow trench field oxides on two sides of the active region and a collector electrode is guided out through deep-hole contact. The silicon germanium heterojunction NPN triode further comprises a collector region implantation window formed by etching silicon dioxide, P-type polycrystalline silicon and silicon nitride, a lateral wall indent structure is formed by horizontally etching the silicon dioxide, a P-type silicon germanium epitaxial layer is formed at the bottom of the window, the lateral wall indent structure and the P-type polycrystalline silicon contacting with the silicon germanium epitaxial layer serve as an intrinsic base region and outer base regions, inner spacers are formed on the inner side walls of the window, and an emitter region consists of N-type polycrystalline silicon which is filled into the window and extends out of the window from the top of the window. The invention further discloses a manufacture method for the silicon germanium heterojunction NPN triode. The silicon germanium heterojunction NPN triode has the advantages that use of photomasks can be decreased, cost can be reduced, the dimension of the triode can be reduced, parasitic resistance can be reduced and characteristic frequency can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a germanium-silicon heterojunction NPN transistor; the invention also relates to a manufacturing method of the germanium-silicon heterojunction NPN transistor. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Silicon germanium ...

AI Technical Summary

Problems solved by technology

The device technology is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 3. The deep trench isolation process is complicated and the cost is high

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