MEMS (Micro-electromechanical Systems) wideband frequency vibration energy collector based on PMNT (Lead Magnesium Niobate-Lead Titanate) piezoelectric mono-crystal, and preparation method

A technology of vibration energy harvesting and piezoelectric single crystal, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. It can solve the problems of low output power and narrow operating frequency band, and achieve the effect of high output characteristics

Inactive Publication Date: 2012-07-04
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims at the above-mentioned deficiencies that exist in the prior art, proposes a kind of MEMS broadband vibration energy harvester and preparation method based on PMNT piezoelectric single crystal, make...

Method used

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  • MEMS (Micro-electromechanical Systems) wideband frequency vibration energy collector based on PMNT (Lead Magnesium Niobate-Lead Titanate) piezoelectric mono-crystal, and preparation method
  • MEMS (Micro-electromechanical Systems) wideband frequency vibration energy collector based on PMNT (Lead Magnesium Niobate-Lead Titanate) piezoelectric mono-crystal, and preparation method
  • MEMS (Micro-electromechanical Systems) wideband frequency vibration energy collector based on PMNT (Lead Magnesium Niobate-Lead Titanate) piezoelectric mono-crystal, and preparation method

Examples

Experimental program
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Embodiment 1

[0037] Embodiment one: if figure 1 As shown, the piezoelectric energy harvester of this embodiment includes a silicon fixed base, a support layer, a PMNT piezoelectric film layer and a quality block, wherein: 1-SiO 2 layer, 2-Si layer, 3-epoxy resin layer, 4-support layer, 5-conductive epoxy resin layer, 6-PMNT piezoelectric film layer, 7-liquid, 8-electrode layer, 9-container.

[0038] Described silicon fixing base is made of Si layer 2 and oxide SiO on it 2 Layer 1 composition;

[0039] The mass block is composed of a liquid layer 7 and a container 9;

[0040] The liquid layer 7 refers to liquid mercury;

[0041] The container 9 refers to a square container prepared by the SU8 glue process.

[0042] The support layer 4 refers to carbon fibers with a thickness of 15 μm;

[0043] The piezoelectric film 6 refers to a PMNT piezoelectric film layer with a thickness of 10 μm;

[0044] The electrode layer 8 is a Cr / Au alloy with a thickness of 0.20 μm.

[0045] The present e...

Embodiment 2

[0061] Embodiment two: if figure 2 As shown, the piezoelectric energy harvester of this embodiment includes a silicon fixed base, a support layer, a PMNT piezoelectric film layer and a quality block, wherein: 1-SiO 2 layer, 2-Si layer, 3-epoxy resin layer, 4-support layer, 5-conductive epoxy resin layer, 6-PMNT piezoelectric film layer, 7-liquid, 8-electrode layer, 9-container.

[0062] Described silicon fixing base is made of Si layer 2 and oxide SiO on it 2 Layer 1 composition;

[0063] The mass block is composed of a liquid layer 7 and a container 9;

[0064] The liquid layer 7 refers to liquid mercury;

[0065] The container 9 refers to a square container prepared by the SU8 glue process.

[0066] The support layer 4 refers to glass fibers with a thickness of 20 μm;

[0067] The piezoelectric film 6 refers to a PMNT piezoelectric film layer with a thickness of 15 μm;

[0068] The electrode layer 8 is a Ti / Pt alloy with a thickness of 0.15 μm.

[0069] The present e...

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Abstract

The invention provides an MEMS (Micro-electromechanical Systems) wideband frequency vibration energy collector based on PMNT (Lead Magnesium Niobate-Lead Titanate) piezoelectric mono-crystal. The device is a piezoelectric device which converts mechanical energy of flexural vibration into electric energy and comprises a silicon fixing seat, a support layer, a PMNT piezoelectric film layer and a mass block, wherein the silicon fixing seat, the support layer and the PMNT piezoelectric film layer are adhered sequentially to form a multilayer structure; one end of the multilayer structure is suspended; and the mass block is fixed on a free end of the multiplayer structure. According to the invention, PMNT mono-crystal which has better piezoelectric performance is adopted as piezoelectric material, and PMNT piezoelectric films having high performance are manufactured with a bonding and thinning method, such that the output property of the device can be improved effectively, and the conversion efficiency is increased; at the same time, a micro-container which is fixed at the end part of a cantilever and is full of liquid is adopted, such that inherent frequency of the device under a vibration condition can be changed effectively in real time, and the vibration frequency of the environment is matched better, and the device can obtain stable output in the vibration environment within a relatively wide frequency scope.

Description

technical field [0001] The invention relates to a device in the field of energy technology, in particular to a MEMS broadband energy harvester based on a PMNT piezoelectric single crystal and a preparation method thereof. Background technique [0002] With the continuous deepening of research on wireless sensor networks and various implanted sensors, new requirements and challenges are put forward for its power supply. Miniature piezoelectric vibration energy harvester, as a new type of self-sustaining micro-energy that does not need to be replaced and unattended, can convert the vibration of the device's environment into electrical energy through the piezoelectric effect and can be used for various low-power microelectronics. Device power supply is receiving more and more attention from academia and industry. [0003] At present, most of the piezoelectric energy harvesters prepared by MEMS technology are multi-layer cantilever beam structures formed by depositing a layer o...

Claims

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Application Information

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IPC IPC(8): H01L41/083H01L41/22B81B3/00B81C1/00
Inventor 刘景全唐刚杨斌杨春生杉山进
Owner SHANGHAI JIAO TONG UNIV
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