Formula of chemical mechanical polishing slurry for silicon wafers
A chemical-mechanical and polishing slurry technology, applied in polishing compositions containing abrasives, etc., can solve problems such as affecting the quality of silicon wafers, increasing polishing costs, and scratching silicon wafers, improving polishing rate, improving suspension stability, cost reduction effect
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Embodiment 1
[0019] Example 1: Titanium dioxide purchased from the market was used to prepare polishing slurry. The electron microscope photos and XRD diffraction patterns are as follows: figure 1 , 2 Shown. The particle size ranges from 100 to 1500 nm, and the crystal phase is anatase titanium dioxide. The solid content of the prepared slurry is 0.1%. Sodium hydroxide solution is used to adjust the slurry to different pH, and the slurry is stirred with an electric stirrer for about 10 minutes to obtain the desired polishing slurry. The obtained slurries were respectively used for polishing single crystal silicon wafers. The polishing experiment adopts UNIPOL-802 polishing machine, the polishing pressure is 0.09Kg / cm 2 , The rotating speed of the polishing disc is 128rpm, the slurry flow rate is 12000ml / min, and the silicon wafer is weighed before and after polishing with SartoriusCP225D precision electronic balance (precision 0.01mg), and the material removal rate (MRR value) reflecting th...
Embodiment 2
[0020] Example 2: According to a similar method to Example 1, the solid content of titanium dioxide in the fixed slurry was 0.5%, the pH value was 11.5, and different amounts of monoethanolamine were added to determine the MRR values. Plot the measured MRR value against the amount of monoethanolamine added, see Figure 4 . It is proved that the addition of a small amount of monoethanolamine is very effective for increasing the cutting speed. However, it decreases after a certain concentration, and the cutting speed is high between 0.02% and 0.055%.
Embodiment 3
[0021] Example 3: According to the method similar to Example 1, the solid content of titanium dioxide in the fixed slurry is 0.5%, the pH value is 11.5, and the same amount of monoethanolamine, diethanolamine, and triethanolamine are added respectively, namely n MEA =n DEA =n TEA , The mass percentages are 0.035%, 0.0602%, and 0.0855%, respectively, which are used for the polishing of monocrystalline silicon wafers, determine the MRR value, and map different additives, such as Figure 5 . It proves that monoethanolamine has the best effect, followed by diethanolamine, and triethanolamine cannot increase the MRR value.
[0022] Example 4: According to a similar method to Example 1, under the condition that the content of titanium dioxide and monoethanolamine are fixed at 0.5% and 0.035%, respectively, the pH value of the slurry is adjusted to different values, and they are respectively used for the polishing of monocrystalline silicon wafers, and their determination MRR value a...
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