Manufacture method of diode SF chip

A manufacturing method and diode technology, applied in semiconductor/solid-state device manufacturing, electrolytic coating, electrical components, etc., can solve the problems of diode SF chip damage, unstable breakdown voltage, low hard breakdown rate, etc., and reduce power consumption , Increase reliability and service life, improve the effect of surge capacity

Active Publication Date: 2012-07-11
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the production of diode SF chips in the semiconductor industry generally adopts the double diffusion method of paper sources. There are two problems in the existing technology: first, the diffusion junction is deep and uneven, resulting in unstable breakdown voltage, low hard breakdown rate, and high wave resistance. Second, the forward voltage drop is large, resulting in large power consumption, so the diode SF chip is easily damaged during work

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The manufacture method of diode SF chip, comprises the steps:

[0033] (1) Place the surface-treated silicon wafer in a diffusion furnace, control the temperature in the diffusion furnace within the range of 1100-1200°C, carry the gas into the liquid phosphorus source for pre-deposition, and control the flow rate of the gas at about 3.5 per hour cubic, ventilated for 3 hours, the coverage rate of the phosphorus source is 99.5%;

[0034] (2) Controlling the temperature in the diffusion furnace within the range of 1200° C. to carry out diffusion advancement to the pre-deposited silicon wafer in step (1);

[0035] (3) Soak the silicon wafer propelled by diffusion in step (2) with a concentration of 30% hydrofluoric acid, and then ultrasonically clean it with deionized water to remove the oxide layer on its surface;

[0036] (4) silicon chip is obtained in the step (3), the diffusion junction N+ on one side is ground away, and the overall thickness of the silicon chip is c...

Embodiment 2

[0047] The manufacture method of diode SF chip, comprises the steps:

[0048] (1) Place the surface-treated silicon wafer in a diffusion furnace, control the temperature in the diffusion furnace within the range of 1100-1200°C, carry the gas into the liquid phosphorus source for pre-deposition, and control the flow rate of the gas at about 3.5 per hour Cubic, ventilated for 3 hours, the coverage of the phosphorus source is greater than 99.8%;

[0049] (2) Controlling the temperature in the diffusion furnace within the range of 1250° C. to carry out diffusion advancement to the pre-deposited silicon wafer in step (1);

[0050] (3) Soak the silicon wafer advanced by diffusion in step (2) with a concentration of 30% hydrofluoric acid, and then ultrasonically clean it with deionized water to remove the oxide layer on its surface;

[0051] (4) silicon chip is obtained in the step (3), the diffusion junction N+ on one side is ground away, and the overall thickness of the silicon ch...

Embodiment 3

[0062] The manufacture method of diode SF chip, comprises the steps:

[0063] (1) Place the surface-treated silicon wafer in a diffusion furnace, control the temperature in the diffusion furnace within the range of 1100-1200°C, carry the gas into the liquid phosphorus source for pre-deposition, and control the flow rate of the gas at about 3.5 per hour cubic, ventilated for 3 hours, and the coverage rate of the phosphorus source is greater than 99.9%;

[0064] (2) Controlling the temperature in the diffusion furnace within the range of 1220° C. to carry out diffusion advancement to the pre-deposited silicon wafer in step (1);

[0065] (3) Soak the silicon wafer propelled by diffusion in step (2) with a concentration of 30% hydrofluoric acid, and then ultrasonically clean it with deionized water to remove the oxide layer on its surface;

[0066] (4) silicon chip is obtained in the step (3), the diffusion junction N+ on one side is ground away, and the overall thickness of the ...

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PUM

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Abstract

The invention discloses a manufacture method of a diode SF chip, which includes conducting surface processing on a silicon chip, placing the processed silicon chip in a diffusion furnace, introducing a liquid phosphorus source to conduct pre-deposition and spreading propulsion, immersing the silicon chip through hydrofluoric acid, removing an oxidation layer on the surface, controlling the integral thickness of the silicon chip, removing a diffusion junction N+ on one face in abrasion mode, adopting a liquid boron source, controlling temperature in the diffusion furnace for diffusion to form P+, conducting coarsening processing on the surface of the silicon chip, conducting super sand processing and electronic cleaning agent processing on the chip, oxidizing the chip in the furnace, controlling temperature in a platinum diffusion furnace, filling the platinum into the silicon chip, placing the silicon chip after platinum diffusion into electrophoresis liquid for electrophoresis, placing the silicon chip in a sintering furnace for sintering after electrophoresis, immersing the obtained silicon chip through the hydrofluoric acid, conducting ultrasonic washing on the chip through deionized water, conducting twice nickel plated processes and gold plated processes, and dividing the processed silicon chip into single core particles from the platform face groove position to obtain the required diode SF chip.

Description

technical field [0001] The invention relates to the field of diode manufacturing, in particular to a method for manufacturing a diode SF chip. Background technique [0002] At present, the production of diode SF chips in the semiconductor industry generally adopts the double diffusion method of paper sources. There are two problems in the existing technology: first, the diffusion junction is deep and uneven, resulting in unstable breakdown voltage, low hard breakdown rate, and high wave resistance. Second, the forward voltage drop is large, resulting in large power consumption, so the diode SF chip is easy to be damaged during work. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the invention provides a method for manufacturing a diode SF chip with high reliability and long service life. [0004] In order to solve the above problems, the present invention adopts the following technical solutions to realize: [0005] The manufacture method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/228H01L21/329C25D13/06C25D13/12
Inventor 柴凤玉
Owner CHANGZHOUSR SEA ELECTRONICS
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