Manufacture method of diode SF chip

Abstract

The invention discloses a manufacture method of a diode SF chip, which includes conducting surface processing on a silicon chip, placing the processed silicon chip in a diffusion furnace, introducing a liquid phosphorus source to conduct pre-deposition and spreading propulsion, immersing the silicon chip through hydrofluoric acid, removing an oxidation layer on the surface, controlling the integral thickness of the silicon chip, removing a diffusion junction N+ on one face in abrasion mode, adopting a liquid boron source, controlling temperature in the diffusion furnace for diffusion to form P+, conducting coarsening processing on the surface of the silicon chip, conducting super sand processing and electronic cleaning agent processing on the chip, oxidizing the chip in the furnace, controlling temperature in a platinum diffusion furnace, filling the platinum into the silicon chip, placing the silicon chip after platinum diffusion into electrophoresis liquid for electrophoresis, placing the silicon chip in a sintering furnace for sintering after electrophoresis, immersing the obtained silicon chip through the hydrofluoric acid, conducting ultrasonic washing on the chip through deionized water, conducting twice nickel plated processes and gold plated processes, and dividing the processed silicon chip into single core particles from the platform face groove position to obtain the required diode SF chip.

Description

technical field [0001] The invention relates to the field of diode manufacturing, in particular to a method for manufacturing a diode SF chip. Background technique [0002] At present, the production of diode SF chips in the semiconductor industry generally adopts the double diffusion method of paper sources. There are two problems in the existing technology: first, the diffusion junction is deep and uneven, resulting in unstable breakdown voltage, low hard breakdown rate, and high wave resistance. Second, the forward voltage drop is large, resulting in large power consumption, so the diode SF chip is easy to be damaged during work. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the invention provides a method for manufacturing a diode SF chip with high reliability and long service life. [0004] In order to solve the above problems, the present invention adopts the following technical solutions to realize: [0005] The manufacture method...

AI Technical Summary

Problems solved by technology

[0002] At present, the production of diode SF chips in the semiconductor industry generally adopts the double diffusion method of paper sources. There are two problems in the existing technology: first, the diffusion junction is deep and uneven, resulting in unstable breakdown voltage, low hard breakdown rate, and high wave resistance. Second, the forward voltage drop is large, resulting in large power consumption, so the diode SF chip is easily damaged during work