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Preparation method of controllable linear defects in colloidal photonic crystals

A technology of colloidal photonic crystals and line defects, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of expensive equipment, complicated process, and high cost of photonic crystals, and achieve low cost, simple preparation process, and high efficiency. high effect

Inactive Publication Date: 2015-04-29
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the complex process and expensive equipment, the cost of preparing photonic crystals with line defects by the above method is very high, which is not conducive to wide application and promotion

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The preparation method of the present invention is illustrated by taking the preparation method of controllable line defects in polystyrene (PSt) colloidal photonic crystals as an example.

[0030] In this embodiment, the method for preparing controllable line defects in PSt colloidal photonic crystals includes the following steps:

[0031] Preparation of TiO with Controlled Distribution Density 2 nanorod arrays;

[0032] Dispersing colloidal PSt particles in a dispersion medium to prepare a dispersion containing PSt particles;

[0033] The TiO 2 Nanorod arrays are put into the container, making the TiO 2 The orientation of the nanorods is vertically upward;

[0034] The dispersion containing PSt particles was added to the TiO 2 in said container of the nanorod array; and

[0035] Resting the container to allow the PSt particles in the colloidal state to settle freely to obtain a PSt photonic crystal with controllable line defects.

[0036] The density controllab...

Embodiment 2

[0044] SiO 2 The preparation method of controllable line defects in colloidal photonic crystals is taken as an example to illustrate the preparation method of the present invention.

[0045] In this example, SiO 2 The preparation method of the controllable line defect in the colloidal photonic crystal comprises the following steps:

[0046] Preparation of TiO with Controlled Distribution Density 2nanorod arrays;

[0047] Colloidal SiO 2 The particles are dispersed in the dispersion medium to prepare the SiO-containing 2 dispersion of particles;

[0048] The TiO 2 Nanorod arrays are put into the container, making the TiO 2 The orientation of the nanorods is vertically upward;

[0049] The SiO containing 2 The particle dispersion was added to the TiO 2 in said container of the nanorod array; and

[0050] Leave the container to make the colloidal state of SiO 2 Free settling of particles yields SiO with controllable line defects 2 Photonic crystals.

[0051] The dis...

Embodiment 3

[0059] SiO 2 / Fe 3 o 4 The preparation method of controllable line defects in colloidal photonic crystals is taken as an example to illustrate the preparation method of the present invention.

[0060] In this example, SiO 2 / Fe 3 o 4 The preparation method of the controllable line defect in the colloidal photonic crystal comprises the following steps:

[0061] Preparation of TiO with Controlled Distribution Density 2 nanorod arrays;

[0062] Colloidal SiO 2 / Fe 3 o 4 Composite particles dispersed in dispersion medium to prepare SiO 2 / Fe 3 o 4 dispersion of particles;

[0063] The TiO 2 Nanorod arrays are put into the container, making the TiO 2 The orientation of the nanorods is vertically upward;

[0064] The SiO containing 2 / Fe 3 o 4 The particle dispersion was added to the TiO 2 in said container of the nanorod array; and

[0065] Leave the container to make the colloidal state of SiO 2 / Fe 3 o 4 Free settling of particles yields SiO with controlla...

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Abstract

The invention discloses a preparation method of controllable linear defects in colloidal photonic crystals. The method comprises the steps that: a TiO2 nano-rod array is prepared with a controllable distribution density; colloidal-state particles are dispersed in a disperse medium, such that a dispersion liquid is prepared; the TiO2 nano-rod array is placed in a vessel, such that the TiO2 nano-rods are oriented upwards; the dispersion liquid is added into the vessel containing the TiO2 nano-rod array; the vessel is stood, such that the colloidal-state particles are settled freely, and the photonic crystals with controllable linear defects are obtained. With the method, photonic crystals with controllable linear defects are prepared, and the distribution density of the linear defects is controllable. The distribution density of the linear defects in the photonic crystals can be controlled by adjusting the distribution density of the TiO2 nano-rods in the TiO2 nano-rod array. The preparation method provided by the invention is advantaged in simple technology, high efficiency, and low cost.

Description

technical field [0001] The invention relates to the technical field of assembly of photonic crystals, in particular to a method for preparing controllable line defects in colloidal photonic crystals. Background technique [0002] Photonic crystals refer to artificial periodic dielectric structures with photonic bandgap (PBG) properties. The so-called photonic bandgap means that waves in a certain frequency range cannot propagate in this periodic structure, that is, there is a "forbidden band" in this structure itself. By introducing specific defects into the bandgap structure of the crystal, it is possible to control the flow of photons inside the crystal and fabricate various micron-scale optical devices. [0003] Photonic crystals have many unique properties, so they are widely used in optics, telecommunications, computers, chemical production, drug development and biotechnology, etc. Factor optical microcavity, nonlinear switch and amplifier with low driving energy, sup...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B5/00C30B29/16C01G23/053B82Y40/00
Inventor 张辉徐骁龙富鸣
Owner BEIJING JIAOTONG UNIV
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