Acrylic acid positive photoresist and preparation method thereof

Abstract

The invention discloses an acrylic acid positive photoresist and a preparation method thereof. The acrylic acid positive photoresist is prepared from the following components in percentage by weight under the conditions of dust-free and yellow light: 5 to 30 weight percent of polyacrylic resin, 1 to 20 weight percent of photoacid generator, 5 to 40 weight percent of ester containing a plurality of hydroxide radicals and 30 to 60 weight percent of propylene glycol methyl ether acetate. The preparation method comprises the following steps of: (1) adding the ester containing a plurality of hydroxide radicals into the propylene glycol methyl ether acetate; (2) stirring the materials in the step (1) for 6 to 10 hours to form mixed solution; (3) adding the polyacrylic resin and the photoacid generator into the mixed solution; (4) and stirring a composition obtained in the step (3) to obtain the acrylic acid positive photoresist. The acrylic acid positive photoresist prepared according to the invention has the advantages of small diffraction, high resolution and sensitivity, large contrast, good permeability, strong etching resistance capacity and the like.

Description

technical field [0001] The invention relates to a photoresist, in particular to a positive photoresist composition of an acrylic resin system and a preparation method thereof. Background technique [0002] In the fabrication process of integrated circuits, photoresist is a key functional material for the photolithography process. Photolithography is a precision surface processing technology that combines pattern printing and chemical etching. To put it simply, photocopying is used to transfer the pattern on the mask plate to the photoresist on the surface of the silicon wafer to achieve subsequent selective etching or implantation doping. It is the most important process in IC manufacturing, accounting for about half of the steps in chip manufacturing and accounting for about 35% of all costs. The photoresist is particularly important as the main material in the photolithography process. Photoresists can be divided into two categories: photosolvable positive-tone photores...

AI Technical Summary

Problems solved by technology

In order to improve the resolution of the photoresist, people have been continuously improving the photoresist, but the wavelength of the ultraviolet exposure light source suitable for the existing photoresist is generally between 300-600nm, so there is a common problem of low resolution