Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method for double-face illuminated crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of high surface recombination rate of aluminum back field, restriction of efficiency improvement, increase of cleaning process, etc., and achieve improvement of photoelectric conversion efficiency, simplified operation, and simple preparation method Effect

Active Publication Date: 2014-09-03
CSI CELLS CO LTD +1
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional crystalline silicon solar cells are generally single-sided light-receiving type, and the back is an all-aluminum back field. The disadvantage is that the surface recombination rate of the aluminum back field is high, which greatly restricts the improvement of efficiency; After the field battery is packaged, the heat dissipation is poor, and it is easy to reduce the efficiency due to the temperature rise in the working process
Moreover, the method of separately masking both sides needs to increase the corresponding cleaning process, which makes the whole process more complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for double-face illuminated crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A method for preparing a double-sided light-receiving crystalline silicon solar cell, comprising the steps of:

[0041] (1) Clean the original silicon wafer to remove the damaged layer on the back to form a polished surface; the other side (front) remains in its original state;

[0042] (2) Put the fronts of the silicon wafers back to back into the diffusion furnace for boron diffusion, and the back of the silicon wafers is the diffusion surface;

[0043] (3) Deposit a SiN mask layer on the back of the diffused silicon wafer;

[0044] (4) Clean the front side of the silicon wafer, put the silicon wafer into the lye to remove the damaged layer and make texture, so that the other side (front side) of the silicon wafer forms a textured surface, and remove the diffusion diffraction layer at the same time;

[0045] (5) Put the back of the silicon wafer back to back into the diffusion furnace for single-sided phosphorus diffusion, and the front of the silicon wafer is the di...

Embodiment 2

[0050] A method for preparing a double-sided light-receiving crystalline silicon solar cell, comprising the steps of:

[0051] (1) Clean the original silicon wafer to remove the damaged layer on the back to form a polished surface; the other side (front) remains in its original state;

[0052] (2) Put the fronts of the silicon wafers back to back into a diffusion furnace for phosphorus diffusion, and the back of the silicon wafers is the diffusion surface;

[0053] (3) Deposit a SiN mask layer on the back of the diffused silicon wafer;

[0054] (4) Clean the front side of the silicon wafer, put the silicon wafer into the lye to remove the damaged layer and make texture, so that the other side (front side) of the silicon wafer forms a textured surface, and remove the diffusion diffraction layer at the same time;

[0055] (5) Put the back of the silicon wafer back to back into the diffusion furnace for single-sided boron diffusion, and the front of the silicon wafer is the diff...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method for a double-face illuminated crystalline silicon solar cell. The method comprises the following steps of: (1) washing a raw silicon chip, and removing a damaged layer from the back face of the raw silicon chip; (2) performing single-face boron diffusion on the front face of the silicon chip in a back-to-back way, wherein the back face of the silicon chip is a diffusing face; (3) depositing a mask layer on the back face of the diffused silicon chip; (4) washing the front face of the silicon chip, removing a damaged layer, performing texturing, and removing a diffraction diffusion layer; (5) performing single-face phosphorus diffusion on the back face of the silicon chip in a back-to-back way, wherein the front face of the silicon chip is the diffused face; (6) removing a peripheral joint, impurity glass and a mask which are formed by the diffusion; (7) depositing an anti-reflection coating on each of the two faces of the silicon chip; and (8) printing a metal electrode on each of the two faces of the silicon chip, and performing sintering to obtain the double-face illuminated crystalline silicon solar cell. The influence of diffraction on the electrical properties of the cell is avoided, and the photoelectric efficiency of the cell can be improved by 0.3 to 0.5 percent; and the method has positive practical significance.

Description

technical field [0001] The invention relates to a preparation method of a double-sided light-receiving type crystalline silicon solar cell, which belongs to the field of solar cells. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, crystalline silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. Cells have excellent electrical and mechanical properties, therefore, crystalline silicon solar cells occupy an important position in the field of photovoltaics. [0003] Traditional crystalline silicon solar cells are generally single-sided light-receiving type, and the back is an all-aluminum back field. The disadvantage is that the surface recombination rat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 殷涵玉王栩生章灵军
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products