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Polyurethane-acrylate oligomer, and synthesis method and application thereof

A technology of polyurethane acrylate and synthesis method, which is applied in the direction of equipment, photoplate making process of patterned surface, optics, etc., can solve the problem of high film hardness, achieve improved adhesion, excellent storage stability and adhesion, and branching The effect of increasing

Active Publication Date: 2012-08-15
CHANGXING PHOTOELECTRIC MATERIAL +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method obtains a polymer containing two double bonds, resulting in a high hardness of the cured film

Method used

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  • Polyurethane-acrylate oligomer, and synthesis method and application thereof
  • Polyurethane-acrylate oligomer, and synthesis method and application thereof
  • Polyurethane-acrylate oligomer, and synthesis method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] Example 1 - Urethane Acrylate Oligomer A

[0082] (1) Synthesis of Phosphate Ester

[0083] Dissolve hydroxypivalic acid neopentyl glycol monoester in toluene, add phosphorus oxychloride dropwise at 40°C for 5 hours, add water for hydrolysis, and react to obtain phosphoric acid ester, hydroxypivalic acid neopentyl glycol monoester and trichloride The mol ratio of oxyphosphorus is 2: 1, and the mol ratio of water and phosphorus oxychloride is 1: 1;

[0084] (2) Synthesis of semi-adducts

[0085] Under the protection of nitrogen, hydroxyethyl acrylate (HEA) and the phosphoric acid ester in step (1) and dibutyltin dilaurate (DBTDL) were added dropwise to hexamethylene diisocyanate respectively, and the reaction temperature was kept at 50°C, and monitored The concentration of the -NCO group in the system changes until the concentration of the -NCO group no longer changes (the concentration of the -NCO group is detected by the di-n-butylamine method), and the hydroxyl este...

Embodiment 2

[0093] Example 2 - Urethane Acrylate Oligomer B

[0094] (1) Synthesis of Phosphate Ester

[0095] Dissolve hydroxypivalic acid neopentyl glycol monoester in toluene, add phosphorus oxychloride dropwise at 50°C for 4 hours, add water for hydrolysis, and react to obtain phosphoric acid ester, hydroxypivalic acid neopentyl glycol monoester and trichloride The mol ratio of oxyphosphorus is 2: 1.05, and the mol ratio of water and phosphorus oxychloride is 1.05: 1;

[0096] (2) Synthesis of semi-adducts

[0097] Under the protection of nitrogen, hydroxypropyl acrylate (HPA) and the phosphoric acid ester in step (1) and dibutyltin dilaurate (DBTDL) were added dropwise to isophorone diisocyanate respectively, and the reaction temperature was kept at 40° C., monitored The concentration of the -NCO group in the system changes until the concentration of the -NCO group no longer changes (the concentration of the -NCO group is detected by the di-n-butylamine method), and the hydroxyl es...

Embodiment 3

[0105] Example 3 - Urethane Acrylate Oligomer C

[0106] (1) Synthesis of Phosphate Ester

[0107] Dissolve hydroxypivalic acid neopentyl glycol monoester in toluene, add phosphorus oxychloride dropwise at 60°C for 3 hours, add water for hydrolysis, and react to obtain phosphoric acid ester, hydroxypivalic acid neopentyl glycol monoester and trichloride The mol ratio of oxyphosphorus is 2: 1, and the mol ratio of water and phosphorus oxychloride is 1.05: 1;

[0108] (2) Synthesis of semi-adducts

[0109] Under the protection of nitrogen, add hydroxyethyl acrylate, phosphate ester and dibutyltin dilaurate (DBTDL) in step (1) to toluene diisocyanate dropwise, keep the reaction temperature at 50°C, and monitor the -NCO group in the system The concentration of the concentration changes until the concentration of the -NCO group no longer changes (the concentration of the -NCO group is detected by the di-n-butylamine method), and the semi-adducts of the hydroxyl ester type toluene...

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Abstract

The invention discloses a polyurethane-acrylate oligomer, and a synthesis method and application thereof. The synthesis method comprises the steps of synthesis of phosphate, synthesis of semi-additive product, synthesis of new polyalcohol and synthesis of polyurethane-acrylate oligomer, wherein the synthesis of the polyurethane-acrylate oligomer comprises the following steps: dissolving dibutyltin dilaurate in acetone, dropwisely adding into the hydroxy ester type diisocyanate-phosphate type diisocyanate mixed semi-additive product and the synthesized new polyalcohol, and keeping at 40-50 DEG C until the 2274cm<-1> absorption peak in the reaction mixture infrared spectrum completely disappears. The invention also provides a photo-imageable composition which comprises the polyurethane-acrylate oligomer, a high-molecular adhesive polymer, a polyfunctional group acrylate and a photoinitiator. The phosphate monomer is introduced into the resin chain, thereby enhancing the adhesive force of the product for the base material and obviously enhancing the flexibility; and the polyurethane-acrylate oligomer can be used for image transfer products, such as printed substrates, touch screens and plasma display panels.

Description

technical field [0001] The invention relates to a polyurethane acrylate oligomer and its synthesis method, and relates to the application of the oligomer to prepare a photoimageable composition. The imageable composition has excellent adhesion, flexibility and pattern forming ability to the base material, and can be widely used in printed circuit boards, touch screens, plasma display panels (PDP) and the like. Background technique [0002] Photoresist is an indispensable basic key material in the image transfer process for the production of electronic products. When manufacturing electronic devices such as circuit boards and plasma display panels, the method of forming relief patterns on the surface of the substrate is often used to complete the image transfer of the circuit: first by forming a layer of photoresist resin film on the surface of the substrate, and then A patterned resist layer is formed by photolithography, and finally the image transfer of the circuit is com...

Claims

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Application Information

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IPC IPC(8): C08G18/81C08G18/71C08G18/48C08G18/34G03F7/033
Inventor 杨明雄周婵华王邦清涂伟萍
Owner CHANGXING PHOTOELECTRIC MATERIAL
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