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Solar cell manufacturing method and solar cell

A solar cell and manufacturing method technology, applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complicated photolithography process steps and high cost, and achieve the effects of improving service life, reducing costs, and simplifying process steps

Active Publication Date: 2012-08-15
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the disadvantages of complex photolithography process steps and high cost in the production process of IBC solar cells in the prior art, and to provide a method that requires only one mask and no mask in the production process. Calibration issues, method of fabricating solar cells with lower cost, fewer process steps, and precise control of dopant ion concentrations, and solar cells

Method used

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  • Solar cell manufacturing method and solar cell
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  • Solar cell manufacturing method and solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0056] refer to figure 1 , step S 1 . Forming an N+ type doped layer 2 on the surface of the N type substrate 1 , the sheet resistance of the N+ type doped layer is 20Ω / □. Specifically, phosphorus ions are accelerated to 500eV and the phosphorus ions are implanted into the N-type substrate from the surface of the N-type substrate by means of ion implantation.

[0057] refer to figure 2 , step S 2 1. Forming a patterned thin film 3 on the surface of the N+ type doped layer 2, wherein the area not covered by the patterned thin film 3 is an open area; the patterned thin film acts as a mask. The patterned film 3 is formed by screen printing, wherein the patterned film has a thickness of 1 μm and is made of synthetic rubber. After the patterned film is formed, the film is dried.

[0058] refer to image 3 , step S 3 1. Etching the open area, the etching depth is greater than the thickness of the N+ type doped layer 2 and up to the N-type substrate 1, in this embodiment, th...

Embodiment 2

[0065] refer to figure 1 , step S 1 . Forming an N+ type doped layer 2 on the surface of the N type substrate 1 , the sheet resistance of the N+ type doped layer is 100Ω / □. Specifically, phosphorus ions are accelerated to 50keV and the phosphorus ions are implanted into the N-type substrate from the surface of the N-type substrate by means of ion implantation.

[0066] refer to figure 2 , step S 2 1. Forming a patterned thin film 3 on the surface of the N+ type doped layer 2, wherein the area not covered by the patterned thin film 3 is an open area; the patterned thin film acts as a mask. The patterned film 3 is formed by screen printing, wherein the patterned film has a thickness of 50 μm and is made of copper-aluminum alloy. After the patterned film is formed, the film is dried.

[0067] refer to image 3 , step S 3 1. Etching the open area, the etching depth is greater than the thickness of the N+ type doped layer 2 and reaches the N-type substrate 1. In this embod...

Embodiment 3

[0074] refer to figure 1 , step S 1 . Forming an N+ type doped layer 2 on the surface of the N type substrate 1 , the sheet resistance of the N+ type doped layer is 60Ω / □. Specifically, phosphorus ions are accelerated to 30keV and the phosphorus ions are implanted into the N-type substrate from the surface of the N-type substrate by means of ion implantation.

[0075] refer to figure 2 , step S 2 1. Forming a patterned thin film 3 on the surface of the N+ type doped layer 2, wherein the area not covered by the patterned thin film 3 is an open area; the patterned thin film acts as a mask. The patterned film 3 is formed by screen printing, wherein the patterned film has a thickness of 30 μm and is made of copper-aluminum alloy. After the patterned film is formed, the film is dried.

[0076] refer to image 3 , step S 3 1. Etching the open area, the etching depth is greater than the thickness of the N+ type doped layer 2 and reaches the N-type substrate 1. In this embodi...

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Abstract

The invention discloses a solar cell manufacturing method which comprises the following steps: forming an N+ type doping layer on the surface of an N type substrate; forming a thin film with a pattern on the surface of the N+ type doping layer; etching an open area till a groove is formed in the N type substrate, wherein the etching depth is more than the thickness of the N+ type doping layer; forming a P+ type doping area in the surface of the groove, wherein the P+ type doping area is not in mutual contact with the non-etched N+ type doping layer; removing the thin film to obtain a doped chip; forming a coating on the back face of the doped chip; forming a second passivation layer on the surface of the doped chip; forming a positive electrode and a negative electrode on the surface of the doped chip; and sintering the doped chip so that metal elements of the positive electrode and the negative electrode as well as the doped chip are subjected to eutectic compounding. The invention further discloses a solar cell. The manufacturing method disclosed by the invention has the advantages that the process steps are simplified, a photoetching machine does not need to be purchased, a plurality of mask plates do not need to be used, a mask plate calibration problem is avoided and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to a method for manufacturing a solar cell and a solar cell, in particular to a method for manufacturing a back-contact solar cell and the back-contact solar cell. Background technique [0002] New energy is one of the five most decisive technological fields in the world economic development in the 21st century. Solar energy is a clean, efficient and inexhaustible new energy source. In the new century, the governments of various countries regard the utilization of solar energy resources as an important content of the national sustainable development strategy. Photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less constraints, low failure rate, and easy maintenance. [0003] In recent years, with the rapid development of international photovoltaic power generation, the supply of solar chips is in short supply, so improving the photoelectric conversion efficiency of solar chips and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0352
CPCY02E10/547Y02P70/50
Inventor 钱锋陈炯洪俊华
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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