Non-balanced closed field magnetron sputtering ion plating equipment
A technology of magnetron sputtering and closed field, which is applied in the direction of sputtering plating, ion implantation plating, vacuum evaporation plating, etc., to achieve the effects of easy observation, guaranteed density and adhesion, and convenient opening
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Embodiment 1
[0028] Embodiment 1 of the present invention: as figure 1 , figure 2 As shown, an unbalanced closed-field magnetron sputtering ion plating equipment includes a vacuum chamber 1 and a control cabinet 3, a vacuum control cabinet 2 is provided below the vacuum chamber 1, a manual operation interface 4 and a fully automatic An operation interface 5, a side-opening furnace door 23 is provided on the vacuum chamber 1, an argon gas cylinder 8 and a nitrogen gas cylinder 9 are provided behind the vacuum control cabinet 2, a gas pressure gauge 10 is provided behind the vacuum control cabinet 2, and a gas The flow feedback system 16 is connected with the gas pressure gauge 10 . The vacuum control cabinet 2 includes a diffusion pump, a Roots pump and a mechanical pump; the vacuum control cabinet 2 is provided with an inert gas flowmeter 11 and a monochromator 6 ; and a vacuum gauge 7 is provided above the vacuum chamber 1 . The vacuum degree in the vacuum chamber 1 is 10-1Pa.
[0029...
Embodiment 2
[0035] Embodiment 2 of the present invention: as figure 1 , figure 2 As shown, an unbalanced closed-field magnetron sputtering ion plating equipment includes a vacuum chamber 1 and a control cabinet 3, a vacuum control cabinet 2 is provided below the vacuum chamber 1, a manual operation interface 4 and a fully automatic An operation interface 5, a side-opening furnace door 23 is provided on the vacuum chamber 1, an argon gas cylinder 8 and a nitrogen gas cylinder 9 are provided behind the vacuum control cabinet 2, a gas pressure gauge 10 is provided behind the vacuum control cabinet 2, and a gas The flow feedback system 16 is connected with the gas pressure gauge 10 . The vacuum control cabinet 2 includes a diffusion pump, a Roots pump and a mechanical pump; the vacuum control cabinet 2 is provided with an inert gas flowmeter 11 and a monochromator 6 ; and a vacuum gauge 7 is provided above the vacuum chamber 1 . The vacuum degree in the vacuum chamber 1 is 10-1Pa.
[0036...
Embodiment 3
[0042] Embodiment 3 of the present invention: as figure 1 , figure 2 As shown, an unbalanced closed-field magnetron sputtering ion plating equipment includes a vacuum chamber 1 and a control cabinet 3, a vacuum control cabinet 2 is provided below the vacuum chamber 1, a manual operation interface 4 and a fully automatic An operation interface 5, a side-opening furnace door 23 is provided on the vacuum chamber 1, an argon gas cylinder 8 and a nitrogen gas cylinder 9 are provided behind the vacuum control cabinet 2, a gas pressure gauge 10 is provided behind the vacuum control cabinet 2, and a gas The flow feedback system 16 is connected with the gas pressure gauge 10 . The vacuum control cabinet 2 includes a diffusion pump, a Roots pump and a mechanical pump; the vacuum control cabinet 2 is provided with an inert gas flowmeter 11 and a monochromator 6 ; and a vacuum gauge 7 is provided above the vacuum chamber 1 . The vacuum degree in the vacuum chamber 1 is 10-2Pa.
[0043...
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