Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing graphene gas sensors in batches based on nano soft lithography

A gas sensor, graphene technology, applied in instruments, measuring devices, scientific instruments, etc., can solve the problems of inconsistent performance of graphene sensors, difficult to control the shape and size of graphene, and unfavorable integration of micro-nano-scale graphene sensors. Conducive to integration, improved sensitivity, and consistent shape rules

Inactive Publication Date: 2012-09-19
HARBIN INST OF TECH
View PDF2 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems that the shape and size of graphene are difficult to control in the graphene sensor preparation technology prepared by the prior art, the performance of the graphene sensor produced is inconsistent, and it is not conducive to the integration of micro-nano-scale graphene sensors, the present invention provides a nanometer-based A method for preparing graphene gas sensors in batches by soft printing technology, which can batch prepare graphene sensor devices with regular shapes and the same properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing graphene gas sensors in batches based on nano soft lithography
  • Method for preparing graphene gas sensors in batches based on nano soft lithography
  • Method for preparing graphene gas sensors in batches based on nano soft lithography

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0040] Specific Embodiment 1: This embodiment provides a new method for preparing graphene gas sensors in batches based on nano soft printing technology, which is specifically completed according to the following steps:

[0041] 1. Preparation of graphene film:

[0042] (1) Preparation of graphene oxide film: make graphene oxide into a suspension with a concentration of 0.0001~0.0005g / ml, and then drop a layer of graphene oxide suspension on the cleaned silicon wafer with a 300nm thick oxide film solution, and dry the silicon wafer at a temperature of 30-90°C for 10min-1h.

[0043] (2) Preparation of CVD graphene film: CVD graphene prepared with copper foil as catalyst was transferred to silicon wafer with oxide layer.

[0044] 2. Preparation of regular-shaped graphene:

[0045] ①. After the graphene oxide on the silicon wafer is dried in step 1, spin coat a layer of polymethyl methacrylate on its surface, and the spin coating speed is 2000r / min~12000r / min.

[0046] ②. Place ...

specific Embodiment approach 2

[0058] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the graphene oxide described in step 1 (1) is made into a suspension with a concentration of 0.0002-0.0004 g / ml. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0059] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the graphene oxide described in step 1 (1) is made into a suspension with a concentration of 0.0003 g / ml. Others are the same as in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing graphene gas sensors in batches based on nano soft lithography, belonging to the field of preparation of graphene sensors. In order to solve the problems in the existing graphene sensor preparation technology that the graphene shapes and sizes are difficult to control, and the prepared graphene sensors have inconsistent performances, thus being not beneficial to micro / nano graphene sensor integration, the method comprises the following steps: 1. preparation of a graphene film; 2. preparation of graphenes (including graphenes prepared by a reduction-oxidation method and a CVD (chemical vapor deposition) method) in regular shapes; 3. modification of graphenes; and 4. preparation of the graphene gas sensors in batches. The method is mainly used for preparing the graphene gas sensors in batches. The method has the following advantages: the advantages of nano soft lithography and the two-dimensional material graphene are given full play to; and the prepared strip graphene sensors have the same properties, laying a foundation for wide application and industrialization of the graphene sensors.

Description

technical field [0001] The invention belongs to the field of graphene sensor preparation, in particular to a method for preparing graphene gas sensors in batches based on nano soft printing technology. Background technique [0002] Graphene is a new type of carbon material discovered in 2004. The discoverer of graphene, Professor Geim, and others also won the 2010 Nobel Prize in Physics for their discovery of graphene. carbon atoms in sp 2 The hybrid orbitals form a hexagonal honeycomb structure, and the unbonded P orbitals of carbon atoms form large π bonds on the entire plane on the two-dimensional plane. This unique structure makes graphene have a series of special optical, electrical and mechanical properties. For example, in optics, the absorption rate of graphene in the visible light region is only 2.3%; in electricity, the electron movement speed of graphene is as high as 1×10 6 m / s, which is far greater than the movement speed of electrons in other conductors; the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/00
Inventor 胡平安张荣福文振忠张甲王小娜王立锋李俊杰李晓超
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products