High-performance lithium-ion battery porous thin-film silicon-based negative electrode material and preparation method thereof
A silicon-based negative electrode material, lithium-ion battery technology, applied in battery electrodes, electrode carriers/current collectors, circuits, etc., can solve the problems affecting the cycle performance of electrode materials, low conductivity characteristics, etc., to improve the charge-discharge cycle performance, improve Synergy, the effect of enhancing structural stability
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Embodiment 1
[0037] The copper foil mesh with a porosity of 98.0%, an average pore diameter of 100 μm, and a thickness of 70 μm was ultrasonically cleaned with acrylic copper, 10% (mass percentage) dilute hydrochloric acid, distilled water and absolute ethanol in order to remove impurities such as surface oil and surface oxides. . The magnetron sputtering method is adopted, the Si with a purity of 99.99% is used as the target material, the copper foil net collector is used as the substrate, and the background vacuum is 1.0×10 -3 Pa, the working pressure during sputtering is 0.2Pa, the flow rate of argon Ar is 40sccm, the Si target sputtering power is 150W, the revolution speed of the sample table is 15rpm, the sputtering time is 2 hours, and the film thickness obtained by sputtering is 300nm. The obtained three-dimensional porous thin film silicon-based electrode precursor is placed in a box furnace, and heat-treated in a vacuum or inert atmosphere. The heat treatment temperature is 700 ° ...
Embodiment 2
[0040] The copper foam with a porosity of 98.0%, an average pore diameter of 150 μm, and a thickness of 400 μm was ultrasonically cleaned with acetone, 10% (mass percent) dilute hydrochloric acid, distilled water and absolute ethanol in order to remove impurities such as surface oil and surface oxides. The magnetron sputtering method is used, the Si with a purity of 99.999% is used as the target material, the copper foam current collector is used as the substrate, and the background vacuum is 1.0×10 -4 Pa, the working pressure during sputtering is 0.8Pa, the flow rate of argon Ar is 60sccm, the Si target sputtering power is 300W, the revolution speed of the sample table is 20rpm, the sputtering time is 8 hours, and the film thickness obtained by sputtering is 1.0μm. The obtained three-dimensional porous thin film silicon-based electrode precursor is placed in a box furnace, and heat-treated in a vacuum or an inert atmosphere. The heat treatment temperature is 800 ° C, the heati...
Embodiment 3
[0043] The copper foil mesh with a porosity of 98.0%, an average pore diameter of 50 μm, and a thickness of 50 μm was ultrasonically cleaned with acrylic copper, 10% (mass percentage) dilute hydrochloric acid, distilled water and absolute ethanol in order to remove impurities such as surface oil and surface oxides. . The magnetron sputtering method is adopted, with Si with a purity of 99.998% and Sn with a purity of 99.99% as the target (and Si:Sn=1:1), the copper foil net collector as the substrate, and the background vacuum degree is 2.0× 10 -4 Pa, the working pressure during sputtering is 0.3Pa, the flow rate of argon gas Ar is 40sccm, the sputtering power of Si target is 200W, the sputtering power of Sn target is 25W, the revolution speed of sample table is 18rpm, and the sputtering time is 8 hours. The film thickness obtained by shooting was 3.0 μm. The obtained three-dimensional porous thin film silicon-based electrode precursor is placed in a box furnace, and heat-tre...
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