Preparation method of array substrate and TFT structure

Abstract

The invention discloses a preparation method of an array substrate. The method comprises the steps of: after preparing source and drain electrodes and a lead on a gate insulating layer, depositing a semiconductor layer; coating a photoresist on the back of a glass substrate, and carrying out exposure by using graphs of a gate electrode and a lead, and the source and drain electrodes and the lead; removing semiconductors at a position where the photoresist is completely exposed and stripping the photoresist; depositing a passivation layer, carrying out patterning process on the passivation layer and a semiconductor layer, forming a drain electrode through hole, and cutting off semiconductor layer connection between adjacent data lines and semiconductor layer connection between adjacent leads at an edge area; covering an indium tin oxide (ITO) layer, carrying out the patterning process, and forming a pixel electrode pattern. The invention also discloses a TFT structure, through the method and the structure, in a carrier flow process, direct conduction from the source electrode to the drain electrode through the gate insulating layer and an amorphous silicon semiconductor layer is realized, thus characteristics of a TFT can be greatly improved, a number of use of masks is not changed, a processing speed is accelerated, productivity is raised, and cost is reduced.

Description

Technical field [0001] The present invention relates to an array substrate preparation technology, in particular to a method for preparing an array substrate and a thin film field effect transistor (Thin Film Transistor, TFT) structure. Background technique [0002] Flat panel display technology has developed rapidly in the past decade, and great progress has been made in the size of the screen to the quality of the display. Through continuous efforts, the performance of various aspects of the liquid crystal display (Liquid Crystal Display, LCD) has reached the level of the traditional cathode ray tube (Cathode Ray Tube, CRT) display, and has a tendency to replace the CRT display. [0003] As the production of flat panel display products continues to expand, competition among various manufacturers has become increasingly fierce. While constantly improving the performance of their products, various manufacturers have also made continuous efforts to reduce the production costs of th...

AI Technical Summary

Problems solved by technology

[0004] TFT is an important part of the LCD array substrate. Traditional amorphous silicon TFT devices are mainly designed by the bottom-mounted method of amorphous silicon. figure 1 It is a schematic cross-sectional view of an existing TFT device on an array substrate prepared by an amorphous silicon bottom method, figure 1 Among them, 1 is a glass substrate, 2 is a gate insulating layer, 3 is a gate electrode, 4 is a source-drain electrode, 5 is an amorphous silicon semiconductor layer, 6 is a photoresist layer, 7 is a back exposure photoresist removal area, 8 is the passivation layer, 9 is the pixel electrode, based on figure 1 In the shown structure, the conduction layer of carriers is at the interface between the gate insulating layer and the amorphous silicon semiconductor layer, so that electrons must pass through the thickness of the amorphous silicon semiconductor layer twice to be transmitted between the source and drain electrodes, thereby Affect the conductive characteristics of TFT

However, if the amorphous silicon top-mounted method is used, it is often necessary to design an additional mask, and the processing is slow, the production capacity is low, and the manufacturing cost is high.

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