Preparation method of high-density ITO (indium tin oxide) evaporation target
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 贵州法拉第磁电科技有限公司
- Publication Date
- 2012-10-17
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Abstract
Description
technical field
[0001] The invention relates to a preparation method of an evaporation coating material, in particular to a preparation method of an ITO oxide evaporation material used for the transparent electrode of a GaN-based light-emitting diode. Background technique
[0002] LED (Light Emitting Diode), or light-emitting diode, is a solid-state semiconductor device that can directly convert electrical energy into light energy. LED has changed the principle of traditional incandescent lamp tungsten luminescence and energy-saving lamp sanki toner luminescence, and uses electric field luminescence. LED has the advantages of small size, long life, high luminous efficiency, high brightness, low heat, no radiation, low power consumption, environmental protection and durability. The application fields of LEDs are very wide, and can be roughly divided into five major fields: backlight, lighting, electronic equipment, display screens, and automobiles. Since Nakamura et al. ...