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Doping unit, doping wafer, doping method, battery and manufacturing method

A manufacturing method and wafer technology, applied in the field of solar energy doping units, can solve the problem of high cost of photolithography process

Active Publication Date: 2015-01-28
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the defects of high photolithography process cost in the production process of the prior art IBC solar cells, and provide a low-cost, less process steps and precise control of dopant ion concentration. Solar energy doping unit, doping wafer, doping method, solar cell and method for manufacturing the same

Method used

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  • Doping unit, doping wafer, doping method, battery and manufacturing method
  • Doping unit, doping wafer, doping method, battery and manufacturing method
  • Doping unit, doping wafer, doping method, battery and manufacturing method

Examples

Experimental program
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Embodiment 1

[0094] refer to Figure 1a A P-type heavily doped region 21 is formed in the first region for contacting the anode electrode on the back surface of the N-type substrate 1 . Specifically, place the first mask 10 on the back of the N-type substrate 1, accelerate boron ions to 500eV, and implant them from the area of ​​the N-type substrate 1 not covered by the first mask 10 on the back of the N-type substrate 1 by means of ion implantation. to the back of the N-type substrate 1 to form a P-type heavily doped region 21 with a sheet resistance of 10Ω / □, wherein the region not covered by the first mask 10 is the first region for contacting the anode electrode. The arrows in the figure indicate the direction of ion implantation, which is only for those skilled in the art to understand the present invention, and should not be construed as a limitation of the present invention.

[0095] refer to Figure 2a An N-type heavily doped region 31 is formed in the third region on the back of...

Embodiment 2

[0099] The principle of embodiment 2 is the same as embodiment 1, and its main process steps are also the same, and the difference only lies in the selection of the following processes and parameters:

[0100] refer to Figure 1a , accelerate boron ions to 50keV and implant them into the back of the N-type substrate 1 from the region of the back of the N-type substrate 1 not covered by the first mask 10 by means of ion implantation to form a P with a sheet resistance of 50Ω / □ Type heavily doped region 21.

[0101] refer to Figure 2a Accelerate phosphorus ions to 50keV and implant them into the back of the N-type substrate 1 from the region of the back of the N-type substrate 1 not covered by the second mask 11 by means of ion implantation to form an N with a sheet resistance of 50Ω / □ Type heavily doped region 31. In this embodiment, the minimum distance between the P-type heavily doped region 21 and the N-type heavily doped region 31 is 70 μm.

[0102] refer to Figure 3...

Embodiment 3

[0105] The principle of embodiment 3 is the same as embodiment 1, and its main process steps are also the same, and the difference only lies in the selection of the following processes and parameters:

[0106] refer to Figure 1a , accelerating boron ions to 30keV and implanting boron ions into the back of the N-type substrate 1 from the region of the back of the N-type substrate 1 not covered by the first mask 10 by means of ion implantation to form a P with a sheet resistance of 30Ω / □ Type heavily doped region 21.

[0107] refer to Figure 2a , accelerate phosphorus ions to 30keV and implant them into the back of the N-type substrate 1 from the region of the back of the N-type substrate 1 not covered by the second mask 11 by means of ion implantation to form an N with a sheet resistance of 40Ω / □ Type heavily doped region 31. In this embodiment, the minimum distance between the P-type heavily doped region 21 and the N-type heavily doped region 31 is 50 μm.

[0108] refer ...

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Abstract

The invention discloses a doping unit, comprising an N-type substrate, P-type heavy doping regions and N-type heavy doping regions formed on a back side of the N-type substrate, and P-type light doping regions formed around the P-type heavy doping regions. In the doping unit, the N-type heavy doping regions and the P-type heavy doping regions, and the N-type heavy doping regions and the P-type light doping regions do not contact with each other, wherein, when the P-type is replaced by the N-type, the N-type is replaced by the P-type. The invention discloses a doping wafer, a doping method, a solar battery and a manufacturing method for the solar battery. In the doping unit, with an N-type substrate material and the P-type light doping regions as buffer layers between the P-type heavy doping regions and N-type heavy doping regions, breakdown of PN junctions caused by too thin depletion layers can be prevented. Thus, the PN junctions having a P+ / P- / N / N+ structure make carrier migration more uniform and speed of the migration more stable, so that service life of the doping wafer is increased.

Description

technical field [0001] The present invention relates to a solar energy doping unit, a doping wafer, a doping method, a solar cell and a manufacturing method thereof, in particular to a solar doping unit, a doping wafer, a doping method and a back junction battery. Junction solar cells and methods of making the same. Background technique [0002] New energy is one of the five most decisive technological fields in the world economic development in the 21st century. Solar energy is a clean, efficient and inexhaustible new energy source. In the new century, the governments of various countries regard the utilization of solar energy resources as an important content of the national sustainable development strategy. Photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less constraints, low failure rate, and easy maintenance. [0003] In recent years, with the rapid development of international photovoltaic power generation, the supply...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/068H01L31/18
CPCH01L31/0682H01L31/022441Y02E10/547
Inventor 陈炯钱锋洪俊华
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY