A white electroluminescent device
An electroluminescent device and electroluminescent technology, applied in the direction of electric solid devices, luminescent materials, electrical components, etc., can solve the problems of poor life and stability of blue phosphorescent materials, shortened device life, and increased device temperature. The effect of improving electron transport capability, improving luminous performance, and reducing start-up voltage
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Embodiment 1
[0038] A white electroluminescent device, its layered structure is as follows:
[0039] Glass / ITO / MoO 3 / NPB / TAPC / Bepp 2 :Ir(MDQ) 2 (acac):FIrpic:Ir(ppy) 3 / TPBi / Bphen / Bphen:CsN 3 / Al.
[0040] Regarding the white photoluminescent device in this embodiment, according to its structure, and using evaporation technology, each organic functional layer is prepared by evaporation in turn; wherein, in the light-emitting layer: the dopant host (beryllium complex material) is Bepp 2 , The red phosphorescent material is Ir(MDQ) 2 (acac), the red phosphorescent material doping ratio is 0.5wt% (mass percentage, the same below), the blue phosphorescent material is FIrpic, the blue phosphorescent material doping ratio is 10wt%; the green phosphorescent material is Ir(ppy) 3 , the doping ratio of the green phosphorescent material is 7wt%; the thickness of the light-emitting layer is 10nm. Other organic functional layer structures of white electroluminescent devices, such as hole injec...
Embodiment 2
[0046] A white light electroluminescence device, its structure is: glass / ITO / WO 3 / TPD / TCTA / BeBq 2 :Ir(piq) 2 (acac:FIr 6 :Ir(ppy) 2 (acac) / TAZ / TPBI / Cs 2 CO 3 / Al.
[0047] Regarding the white photoluminescent device in this embodiment, according to its structure, and using evaporation technology, each organic functional layer is sequentially prepared by evaporation; wherein, in the light-emitting layer: the dopant host is BeBq 2 , the red phosphorescent material is Ir(piq) 2 (acac), the doping ratio of the red phosphorescent material is 5wt%; the blue phosphorescent material is FIr 6 , the doping ratio of the blue phosphorescent material is 20wt%; the green phosphorescent material is Ir(ppy) 2 (acac), the doping ratio of the green phosphorescent material is 5wt%, and the thickness of the light-emitting layer is 15nm. Other organic functional layer structures of white electroluminescent devices, such as hole injection layers (WO 3 ) thickness is 40nm, the thickness o...
Embodiment 3
[0049] A white electroluminescent device, its structure is: glass / ITO / VO x / TDAPB / NPB / BeqQ 2 :Ir(piq) 3 :FIrN 4 :(Oppy) 2 Ir(acac) / BND / TPQ / LiF / Al.
[0050] Regarding the white photoluminescent device in this embodiment, according to its structure, and using evaporation technology, each organic functional layer is prepared by evaporation in turn; wherein, in the light-emitting layer: the doping body is BeqQ 2 , the red phosphorescent material is Ir(piq) 2 (acac), the doping ratio of the red phosphorescent material is 4wt%; the blue phosphorescent material is FIrN 4 , the blue phosphorescent material doping ratio is 15wt%; the green phosphorescent material is (Oppy) 2 Ir(acac), the doping ratio of the green phosphorescent material is 6wt%, and the thickness of the light-emitting layer is 7nm. Other organic functional layer structures of white electroluminescent devices, such as hole injection layer (VO x) thickness of 10nm, the thickness of the hole transport layer (TDAP...
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