Method for preparing terahertz indium phosphide Gunns tube
An indium phosphide and terahertz technology is applied in the fields of final product manufacturing, sustainable manufacturing/processing, and climate sustainability. High mobility, the effect of process optimization
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[0036] Such as figure 1 As shown, a kind of terahertz indium phosphide Gunn tube preparation method provided by the present invention comprises the following steps:
[0037] Step S1: growing an indium phosphide epitaxial layer on a highly doped indium phosphide (InP) substrate. Highly doped indium phosphide can also be directly used as the anode of the Gunn device, which is good for heat dissipation.
[0038] Step S2: The substrate after growing the indium phosphide epitaxial layer is photolithographically shaped, and the metal electrode is evaporated to form a cathode.
[0039] Step S3: On the substrate after the cathode is formed, the mesa is etched by wet etching or reactive coupled plasma. The mesa by etching or etching is cylindrical, with a diameter of 40, 50, 60 or 70 μm, with a structure such as image 3 shown. When using wet etching, chlorine-based solution is used for etching. The chlorine-based solution is 37.5% HCl: 85.11% H 3 PO 4 mixed solution.
[0040] S...
Embodiment 1
[0056] Step 10: growing an indium phosphide epitaxial layer on a highly doped indium phosphide substrate 1 . First, use low-pressure metal-organic chemical vapor deposition (LP-MOCVD) to grow doped N-type indium phosphide as the buffer layer 2. The thickness of the buffer layer 2 is 1.2 μm and the concentration is 1*10E18cm -3 . Then use molecular beam epitaxy to grow low-doped N-type indium phosphide as the active layer 3, the thickness of the active layer 3 is 1.5, and the concentration is 0.75*10E16cm -3 about.
[0057] Step 20: The substrate 1 after growing the indium phosphide epitaxial layer is photolithographically shaped, the metal electrode is evaporated, the photoresist is removed, and then annealed to form a cathode. The photoresist was stripped by acetone, and the annealing temperature was 380°C.
[0058] Step 30: On the substrate 1 after the cathode is formed, use wet etching or reactive coupled plasma to etch the mesa. Such as image 3 As shown, the mesa tha...
Embodiment 2
[0062] The difference between this embodiment and the first embodiment is that the buffer layer 2 has a thickness of 1.8 μm and a concentration of 1.5*10E18cm -3 . The thickness of the active layer 3 is 2μm, and the concentration is 1.1*10E16cm -3 about. The annealing temperature for forming the cathode is 450° C., and the annealing temperature for forming the anode is 400° C. The diameter of the cylindrical mesa is 70 μm. Thin the back of the substrate 1 after felting, and remove the wax to a thickness of 10 μm. Other places are completely consistent with Embodiment 1.
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