Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

On-line SPM generating system and control method thereof

A generation system, flow control technology, applied in the direction of ratio control, cleaning methods and appliances, non-electric variable control, etc., can solve the problems of the surface material ruthenium reflectance reduction, damage, etc., to achieve the best treatment process, accurate mixing ratio, Active and stable effect

Active Publication Date: 2012-10-31
CHANGZHOU RUIZE MICROELECTRONICS
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The mixing ratio, activity, temperature of the SPM mixture, as well as the spraying method and flow rate of SPM have a crucial impact on the quality and efficiency of substrate treatment. Improper treatment will cause critical dimension loss and surface materials due to corrosion of the chemical solution. The light reflectance of ruthenium (Ru) is reduced, which may be a fatal injury for high-end semiconductor processes of 32nm and above
However, the above-mentioned patents and patent applications do not provide effective technical solutions for the control of the mixing ratio, activity, temperature, and spraying mode and spraying flow rate of SPM.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • On-line SPM generating system and control method thereof
  • On-line SPM generating system and control method thereof
  • On-line SPM generating system and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] In order to better understand the above technical solutions of the present invention, a further detailed description will be given below in conjunction with the drawings and embodiments.

[0041] Online SPM generation system of the present invention such as figure 1 and figure 2 As shown, it includes H2SO4 supply unit 100, H2O2 supply unit 200, SPM mixing spray unit 300 and control unit 400, the functional block diagram of the control unit is shown in image 3 .

[0042] H2SO4 supply unit 100 includes H2SO4 flow control element 120, H2SO4 flow control element 120 is connected to SPM mixing spray unit 300 through H2SO4 delivery pipeline;

[0043] The H2O2 supply unit 200 includes a H2O2 flow control element 220, and the H2O2 flow control element 220 is connected to the SPM mixing spray unit 300 through the H2O2 delivery pipeline;

[0044] The SPM mixing spray unit 300 includes an SPM mixing element 310 and at least one SPM shower head 320; the SPM mixing element 310 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An on-line SPM generating system and a control method thereof relate to a method or equipment specially suitable for manufacturing or processing semiconductors, solid devices or other parts, particularly a stripping agent of photo-resist materials in the integrated circuit process. The SPM generating system comprises an H2SO4 supply unit, an H2O2 supply unit, an SPM mixed spraying unit and a control unit, wherein the SPM compound spraying unit comprises an SPM compound element and at least one SPM spray header; the SPM compound element comprises at least two input ends and an SPM output end; an H2SO4 flow control element is connected with the first input end of the SPM compound element through an H2SO4 delivery pipeline; an H2O2 flow control element is connected with the second input end of the SPM compound element through an H2O2 delivery pipeline, and the SPM output end of the SPM compound element is connected with the SPM spray header. The system can control the flow of vitriol and hydrogen peroxide by flow detection and feedback, so that the control system has the advantages that the control precision is high; the flow value is stable; the mixing ratio of the prepared SPM mixed solution is accurate; and the regulating range is wide. Therefore, the activation range of the SPM mixed liquor is wide; and different requirements of cleaning can be met.

Description

technical field [0001] The present invention relates to a method or equipment specially suitable for manufacturing or processing semiconductor or solid device or parts thereof, especially suitable for the treatment of stripping agent of photoresist material in integrated circuit technology. Background technique [0002] In the manufacturing process of semiconductors, integrated circuits, photovoltaic products and other electronic products, it is necessary to perform photolithography on various substrates represented by semiconductor wafers and photomasks. These substrates also include liquid crystal displays, glass substrates for plasma displays, and optical disc masters. Plates, magnetic disks, optical disk masters, etc., hereinafter collectively referred to as substrates. It is necessary to use photoresist material (photoresist) to form layout patterns of integrated circuits and semiconductor devices or other circuit patterns and data patterns on the substrate. After the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/02B08B3/08G03F7/42
CPCB08B3/02B08B3/00G03F7/423G05D11/132
Inventor 金海涛徐飞邬治国沈健
Owner CHANGZHOU RUIZE MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products