Method for backside-contacting a silicon solar cell, and silicon solar cell with backside-contacting

Abstract

The arrangement has a separation element comprising a plug fuse and a magnet, which actuates a reed relay or a reed switch. Functional coupling of signal lines of an electric energy storage is provided by a coupling element, which is galvanically separated. Power transfer lines (30) of the storage are galvanically separated by a separation unit (10) with the separation element. The coupling element is selected from a group consisting of an optocoupler, an operational amplifier with inductive or capacitive transmission, a relay and a semiconductor circuit with high-blocking transistors.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for back contacting a silicon solar cell and a silicon solar cell including the back contact. Background technique [0002] Typically, silicon is used as a basic material for solar cells. In the manufacture of silicon solar cells, the starting point is the crystalline silicon chip, where the p-n junction is formed using doping. To configure the p-n junction, the procedure is therefore usually to use a p-doped silicon substrate and form an n-doped emitter layer. The two ends of the p-n junction are then typically in contact via the front and back of the silicon chip. [0003] In the framework of the backside contact, so-called "back surface fields" are arranged on the backside of the silicon chip in order to prevent recombination losses. For this purpose, an aluminum layer is typically deposited on the backside of the silicon chip, covering the entire surface, and then the a...

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Problems solved by technology

However, ultrasonic loading and surface fusion, or thermal spraying, respectively, give high kinetic energy to the solder particles to be alloyed, which may cause damage to the silicon chip surface, thus causing degradation of the electrical properties of the solar cell

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