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Method for manufacturing flip-chip bonding light emitting diode (LED)

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as dissatisfaction with power LED heat dissipation and uniformity of injection current, poor n-semiconductor contact, and reduced reflectivity, so as to increase luminous efficiency and service life, increase light output and luminous efficiency, and improve uniformity

Inactive Publication Date: 2012-11-07
JIANGSU YANGJING OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When directly bonding, the equiplanarity of the two electrodes is very important to the yield rate of the process, but the defect that occurs is that the two electrodes have not actually reached the true equiplanarity, or the two electrodes have reached the equiplanarity, but there is Waste of light-emitting area; bad contact of n semiconductor; no reflective layer under p-electrode; reflective layer and ohmic layer are separated by insulating layer, so the reflectivity is reduced; p-electrode area is small, so the heat dissipation and injection current of the power LED are not uniform sexual needs

Method used

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  • Method for manufacturing flip-chip bonding light emitting diode (LED)
  • Method for manufacturing flip-chip bonding light emitting diode (LED)
  • Method for manufacturing flip-chip bonding light emitting diode (LED)

Examples

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Embodiment 1

[0039] Example 1: Small size LED without etch shield

[0040] 1. If image 3 As shown, first, a substrate is provided, and the material of the substrate in this embodiment can be, for example, sapphire. A GaN buffer layer (GaN buffer layer) 31 and a GaN LED epitaxial layer are sequentially formed on the substrate 30 . The GaN light-emitting diode epitaxial layer sequentially includes an n-type GaN layer 32, a multi-quantum well active layer (multi-quantum well active layer, MQW active layer, that is, a light-emitting layer) 33 and a p-type GaN layer 34 .

[0041] 2. p-electrode: a p-electrode is formed on the p-type GaN layer 34 by a photolithography process. Such as Figure 4As shown, a first transparent conductive layer 35, a metal reflective layer 36 and a first bonding metal layer are sequentially formed on a p-type GaN layer 34 by evaporation, sputtering or electroplating techniques 37, the first transparent conductive layer 35, the metal reflective layer 36 and the ...

Embodiment 2

[0050] Example 2: Small size LED with etched shield

[0051] Such as Figure 10 and 11 Shown, the difference between this embodiment and embodiment 1 is:

[0052] 7. Electrode window opening: using etching shielding, first coat photosensitive material (photoresist) on the surface of the wafer, and place a photomask on the top of the wafer. The photomask is provided with a pattern corresponding to the area of ​​the insulating layer to be etched. Then perform the exposure (Exposure) step, so that the parallel light passes through the photomask to selectively sensitize the photosensitive material, so the pattern on the photomask is completely transferred to the wafer, and after exposure, use development (Development), which can make The photoresist obtains the same or complementary pattern as the photomask pattern, and then dry-etches the first insulating layer and the second insulating layer.

Embodiment 3

[0053] Example 3: Large size LED without etch shield

[0054] Such as Figure 12 , 13 Shown in and 14, the difference between this embodiment and embodiment 1 is:

[0055] 4. n-electrode: first form the ohmic contact layer of the n-electrode: use a photolithography process to form the ohmic contact layer of the n-electrode on the n-type gallium nitride layer 32, the thickness of the ohmic contact layer is less than p -The sum of the electrode thickness and the etching depth, the material of the ohmic contact layer of the n-electrode can be an alloy of Cr and Au or an alloy of Ti and Au or an alloy of Ti and Al or an alloy of Ti, Al, Cr and Au; reformation The second bonding metal layer of the n-electrode: measuring the thickness (from the top of the p-electrode to the top of the ohmic contact layer of the n-electrode), using a photolithography (photolithography) process to form the second bonding metal layer of the n-electrode, The material of the second bonding metal layer...

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Abstract

The invention discloses a method for manufacturing a flip-chip bonding light emitting diode (LED). The method comprises the following steps of: providing a substrate, and sequentially forming a gallium nitride buffer layer and a gallium nitride LED epitaxial layer on the substrate, wherein the gallium nitride LED epitaxial layer comprises an n-type gallium nitride layer, a light emitting layer and a p-type gallium nitride layer, which are sequentially arranged; forming a p-electrode on the p-type gallium nitride layer; performing dry etching on the gallium nitride LED epitaxial layer which is not covered by the p-electrode, and reaching the n-type gallium nitride layer; forming an n-electrode on the n-type gallium nitride layer; forming an insulating layer on the p-electrode, the n-type gallium nitride layer and the n-electrode to make the insulating layer cover the p-electrode and the n-electrode; performing dry etching on a planar insulating layer, and exposing the p-electrode and the n-electrode, which do not extend to a semiconductor; and welding the p-electrode and the n-electrode on an installation table. By adoption of the method, the light output and luminous efficiency of a nitride flip-chip bonding LED can be effectively improved.

Description

technical field [0001] The invention relates to the manufacturing field of a flip-chip light-emitting diode, in particular to a light-emitting diode bonded by flip-chip bonding of Group III nitrides for lighting applications. Background technique [0002] The earliest nitride LED (light-emitting diode) flip-chip packaging uses metal bumps to precisely position the metal bumps on the die to the conductive contacts on a flip-chip interposer (Board). Afterwards, the metal bumps are heated by means of microwaves, etc., so that the dies are electrically connected to the flip-chip interposer. Finally, the gap between the chip and the flip-chip interposer is encapsulated by dispensing technology, and the packaging of a chip is completed; in addition, the chip usually needs to be baked again to solidify the material filled during dispensing. Because the contact area of ​​the metal bump is still small, it does not fully meet the heat dissipation and injection current uniformity requ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/38
CPCH01L33/00H01L33/38H01L33/44H01L2933/0016
Inventor 廖丰标顾玲
Owner JIANGSU YANGJING OPTOELECTRONICS
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