Method for forming non-load-effect large size groove

A large-scale, no-load technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of fast etching speed, slow etching rate, and connection failure in small-scale trenches, and achieve improved etching. Process performance, the effect of expanding the etching process window, and improving product yield

CN102779780AActive Publication Date: 2012-11-14SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2012-11-14

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Abstract

The invention relates to the field of semiconductor manufacture, in particular to a method for forming a non-load-effect large size groove. Large size and small size contact hole grooves are filled in a deposition medium layer after the metal hard mask etching process, the grinding process is utilized to form a dish recessed area on the large size grooves, load effect formed in etching of the grooves with large size difference is removed, and connection efficacy lose caused by residue caused by the load effect in the large size grooves is effectively avoided. The method improves product yield, further expands an etching process window and further improves etching process performance.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a large-size trench without load effect. Background technique

[0002] Metal hard mask single damascene trench etching process is a key step in the copper wire interconnection process in the back section of the chip. After the etched trench is filled and polished with copper, the first layer of copper wire is formed, and the contact with the lower layer The contacts are connected, and the etching body is generally low dielectric constant silicon oxide or F-containing silicon oxide (FSG) film.

[0003] Figure 1-5 It is a schematic diagram of the process flow structure of metal hard mask single damascene trench etching in the background technology of the present invention; as Figure 1-5 As shown, in the single damascene trench etching process of silicon oxide film containing F, silicon nitride (SiN) layer 12, FSG Layer 13, metal hard mask layer (Ti...

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Embodiment Construction

[0027] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0028] Figure 6-12 It is a schematic structural diagram of the process flow of the method for forming a large-size groove without load effect in the present invention;

[0029] like Figure 6-12 As shown, first, an interlayer dielectric layer (inter layer dielectric, ILD for short) 21 with a thickness of 300A, a barrier layer 22 made of SiN with a thickness of 2500A, and a barrier layer 22 made of SiN with a thickness of 400A are sequentially deposited from bottom to top on the semiconductor structure 2 . A low dielectric constant dielectric layer 23 of silicon oxide (FSG) containing F, a metal hard mask 24 made of TiN with a thickness of 50A, and a metal hard mask 24 made of silicon dioxide (SiO 2 ) oxide layer 25; wherein, the interlayer dielectric layer 21 covers the upper surface of the semiconductor structure 2, the barrier layer 22 covers...