Method for producing rear passivation double-sided solar cell

Abstract

The invention discloses a method for producing a rear passivation double-sided solar cell. The method sequentially comprises the following steps of: positive cleaning, making a texture surface, forming a PN junction through diffusion, performing periphery and rear etching, evaporating a positive SiNx anti-reflection film, evaporating a rear passivation film or / and SiNx [11] passivation film or other passivation films, performing screen printing on a back electrode, performing screen printing on a positive electrode, and sintering. The method for producing the rear passivation double-sided solar cell has the advantages that the compounding rate of the rear surface can be greatly reduced, the back reflection is improved, and the more photon-generated carriers are collected. Compared with processes such as photoetching, laser sintering and laser opening, the method is simple in process flow and suitable for mass production. The actual working and generating efficiency can be effectively improved. The used equipment is compatible with the traditional solar cell equipment, the equipment does not need to be increased, the process cost is low, the capacity is high, and the method has good industry prospects.

Description

technical field

[0001] The invention relates to the production of a double-sided solar cell, in particular to a production method of a back passivated double-sided solar cell. Background technique

[0002] The back of commercial solar cells needs screen printing aluminum paste, and after high temperature sintering, a layer of P is formed on the back. + The dense diffusion layer, and the substrate P - form P + P - structure, which generates a built-in electric field with the same direction as the built-in electric field of the pn junction and a weaker electric field, which plays a role of back reflection on the minority carrier electrons in the base region, reducing the diffusion and recombination loss to the back surface, so P + P - The structure can improve the photogenerated voltage and short-circuit current. In addition, the aluminum back field also has a gettering effect, which can get rid of impurities and defects in the body. However, the aluminum back field has ...

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