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Growth device and method for growing wide-plate bismuth germanate crystals by descending method

A growth device, bismuth germanate technology, which is applied in the field of preparation of wide plate-shaped bismuth germanate crystals, can solve the problems of difficulty and size disadvantages of bismuth germanate crystals, and achieve the effect of avoiding crucible corrosion and shortening the cycle

Active Publication Date: 2015-10-28
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

my country mainly adopts the descending method to grow BGO crystals. Although it has unique advantages in mass production, it has always been at a disadvantage in terms of size.
The conventional crucible drop method cannot provide an ultra-wide horizontal uniform temperature zone and a suitable longitudinal temperature gradient zone, and is limited by the super-sized platinum crucible for placing raw materials and seeds and the Al 2 o 3 Due to the limitations of the design process of the ultra-large alumina down-leading crucible filled with powder, it is extremely difficult to prepare wide plate-shaped bismuth germanate crystals. Therefore, there has been no disclosure of wide plate-shaped bismuth germanate crystals with a width greater than 400mm in the world so far. to report

Method used

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  • Growth device and method for growing wide-plate bismuth germanate crystals by descending method
  • Growth device and method for growing wide-plate bismuth germanate crystals by descending method
  • Growth device and method for growing wide-plate bismuth germanate crystals by descending method

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Experimental program
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Effect test

Embodiment 1

[0055] Wide plate shape 600×30×350mm 3 The preparation of bismuth germanate crystal, concrete preparation method is as follows:

[0056] Bismuth trioxide and germanium dioxide with a purity of 4N or more are weighed and mixed according to the stoichiometric ratio of 2:3, and then placed in a platinum crucible to heat up to above the melting point temperature and kept warm to completely melt the raw materials, and quickly injected into the mold, cooling to obtain more Crystal ingot.

[0057] A 3-layer platinum sheet with a thickness of 0.16mm is made into a section of 600×30mm 2 , a cuboid crucible with a height of 400mm.

[0058] Select the section as 680×94mm 2 , Thickness is 8mm, length is 360mm rectangular parallelepiped aluminum oxide lower crucible.

[0059] Select the size as 600×30×30mm 3 Bismuth germanate crystals were cut, ground and cleaned as seeds, and the length (600mm) of the seed crystals was consistent with the width (600mm) of the wide plate crystals.

...

Embodiment 2

[0063] Wide plate shape 600×30×350mm 3 The preparation of bismuth germanate crystal, concrete preparation method is as follows:

[0064] The ready-made bismuth germanate crystal is selected, cut and ground into the required size and shape, and cleaned as the crystal block of the growth raw material.

[0065] Other steps of embodiment 2 are as described in embodiment 1, and finally make described wide plate bismuth germanate crystal (such as Figure 6 ).

Embodiment 3

[0067] Wide plate shape 600×30×350mm 3 The preparation of bismuth germanate crystal, concrete preparation method is as follows:

[0068] Control the vertical drop rate of the alumina downed crucible to be 0.6 mm / hour and the temperature gradient at the crystal growth interface to be 20 Kelvin / centimeter (K / cm).

[0069] Other steps of embodiment 3 are as described in embodiment 1 or 2, finally make described wide plate shape bismuth germanate crystal (such as Figure 6 ).

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Abstract

The invention provides a growing device and method for growing a wide plate-shaped bismuth germanate crystal according to a descent method. According to the method provided by the invention, a wide plate-shaped and high-quality bismuth germanate inorganic scintillation crystal is prepared according to the steps of: changing the shape of an upper separating brick 7 in the growing device and flexibly adjusting the horizontal width of the growing device and the height of a high-temperature area; designing a platinum crucible and an aluminum oxide leading crucible in huge size; utilizing a long crystal as a seed crystal to horizontally inoculate; and adjusting the uniform horizontal temperature field and the suitable longitudinal temperature gradient.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a growth device for growing wide plate-shaped bismuth germanate crystals by a descent method and a preparation method for the wide plate-shaped bismuth germanate crystals. Background technique [0002] Inorganic scintillation crystals are a class of light-functional crystal materials that can detect various microscopic particles or rays in the fields of nuclear physics and particle physics. It is the core material of high-tech devices and equipment in nuclear physics, high-energy physics, space physics, nuclear medical imaging, industrial non-destructive testing, homeland security, environmental testing and other application fields, and belongs to high-tech materials. Materials are the basis and breakthrough of high technology, one generation of materials and one generation of technology, which is most prominently reflected in the aspect of inorganic scintillat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/32C30B29/64
Inventor 倪海洪王绍华周里华刘光煜陈俊锋赵鹏袁兰英宋桂兰齐雪君张健
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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