Self-assembling growth method of compound semiconductor film

A growth method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of insufficient nucleation density and dislocation density, improve device performance, reduce dislocation and dislocation density, etc. reduced effect

Active Publication Date: 2012-12-26
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to overcome the defects of the above-mentioned existing methods, solve the problem that the traditi...

Method used

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  • Self-assembling growth method of compound semiconductor film
  • Self-assembling growth method of compound semiconductor film
  • Self-assembling growth method of compound semiconductor film

Examples

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Effect test

Embodiment 1

[0030] Embodiment 1: A self-assembled growth method of gallium nitride semiconductor thin film.

[0031] Step 1: The temperature of the MOCVD reaction chamber is raised to 500°C, the pressure is 600~650mbar, and trimethylgallium is introduced for 3 minutes, and a decomposition reaction occurs on the sapphire (0001) substrate to form a 10nm metal thin layer.

[0032] Step 2: Raise the temperature to 900°C and reduce the pressure to 500~550mbar, the metal condenses into small balls with a density of 2.3×10 6 cm -2 , the diameter of the pellet is 400-600nm, and the duty cycle is 65%.

[0033] Step 3: Keep the temperature at 900°C and the pressure at 500-550mbar, and inject hydrogen, trimethylgallium and ammonia gas, and the gallium nitride crystal nuclei are formed at the bottom of the gold particles, with a diameter of 500-800nm.

[0034] Step 4: Increase the temperature to 1000 o C, injecting hydrogen, trimethylgallium and ammonia gas, wherein the V / III ratio is 50, the pres...

Embodiment 2

[0037] Embodiment 2: A self-assembly growth method of an indium nitride semiconductor thin film.

[0038] Step 1: The temperature of the MOCVD reaction chamber is raised to 350°C, the pressure is 600mbar, and trimethyl indium is passed through for 3 minutes, and a decomposition reaction occurs on the sapphire (0001) substrate to form a 10nm metal thin layer.

[0039] Step 2: After 3 minutes, the temperature is raised to 450°C, the pressure is reduced to 500mbar, and the metal condenses into small balls with a density of 1.2×10 6 cm -2 , the diameter of the pellet is 400-600nm, and the duty cycle is 60%.

[0040] Step 3: Keep the temperature at 450° C. and the pressure at 500 mbar, and inject hydrogen, trimethylindium and ammonia gas for 2 minutes. Indium nitride nuclei are formed at the bottom of the gold particles, with a diameter of 400-600 nm.

[0041] Step 4: Increase the temperature to 500 o C, Introduce hydrogen, trimethylindium and ammonia for 20 minutes, wherein the...

Embodiment 3

[0044] Embodiment 3: A self-assembly growth method of an aluminum nitride semiconductor thin film.

[0045] Step 1: The temperature of the MOCVD reaction chamber is raised to 600°C, the pressure is 600mbar, and trimethylaluminum is introduced for 5 minutes, and a decomposition reaction occurs on the sapphire (0001) substrate to form a 15nm metal thin layer.

[0046] Step 2: Raise the temperature to 1150°C and lower the pressure to 500mbar, the metal condenses into small balls with a density of 5.0×10 6 cm -2 , the diameter of the ball is 400-600nm, and the duty cycle is 70%.

[0047] Step 3: Keep the temperature at 1150° C. and the pressure at 500 mbar, inject hydrogen, trimethylaluminum and ammonia, and form gallium nitride nuclei at the bottom of the gold particles, with a diameter of 500-800 nm.

[0048] Step 4: Increase the temperature to 800 o C, injecting hydrogen, trimethylaluminum and ammonia gas, wherein the V / III ratio is 200, the pressure is maintained at 500mbar...

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Abstract

The invention provides a self-assembling growth method of a compound semiconductor film, and the method comprises following steps of previously leading metal source reactant onto a substrate, and decomposing the metal source reactant to form a metal thin layer under high temperature; annealing the metal thin layer to form metal island particles; feeding III-group and V-group reactants, controlling the ratio of the V/III to be ranged from 50 to 200, controlling the temperature to be ranged between 800 to 1000 DEG C, utilizing the metal island particles as growth catalyst, and longitudinal growing nano columns along the metal island; and increasing the temperature to 1050 to 1100 DEG C, increasing the ratio of V/III to 1000 to 2000, accelerating the lateral growth of the top of the nano column, and forming a continuous semiconductor film.

Description

technical field [0001] The invention relates to the growth of a III-V semiconductor single crystal thin film, in particular to a method for growing a high-quality gallium nitride single crystal thin film by vapor phase epitaxy. Background technique [0002] Wide bandgap materials represented by GaN (gallium nitride) are the third-generation semiconductor materials after Si and GaAs, and are used to make electronic devices such as light-emitting diodes, lasers, detectors, high-frequency high-power transistors, etc. [0003] Since commercial high-quality bulk GaN crystals are not yet available, heterogeneous substrates are generally used for epitaxy. However, there is a large lattice mismatch between GaN and sapphire substrates (or Si substrates), which leads to epitaxy. layer generates dislocations that can propagate and pass through the entire epitaxial layer, limiting the performance improvement of GaN devices. In order to reduce the dislocation density and improve the qua...

Claims

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Application Information

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IPC IPC(8): H01L21/20
Inventor 黄小辉周德保杨东黄炳源康健梁旭东
Owner EPITOP PHOTOELECTRIC TECH
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