An Enhanced Switching Device

Abstract

An enhanced switched device. By introducing a non-planar step-shaped structure in a gate region and generating a gallium nitride non-polar surface, semi-polar surface, or combination thereof, two-dimensional electronic gas is interrupted in the gate region. When the gate voltage increases, an electrically conductive trench if formed in the trench layer, thereby enabling the operation of the enhanced device. The manufacturing technique for the device is simple and is compatible with the manufacturing techniques of conventional depletion type devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an enhanced switching device and a manufacturing method thereof. Background technique [0002] The third-generation semiconductor material gallium nitride has the characteristics of large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. In terms of electronic devices, gallium nitride materials are more suitable than silicon and gallium arsenide. Manufacture high temperature, high frequency, high voltage and high power semiconductor devices. [0003] Due to the strong two-dimensional electron gas in the AlGaN / GaN heterostructure, usually the AlGaN / GaN HEMT is a depletion device, making it difficult to realize an enhancement device. However, the application of depletion devices has certain limitations in many places. For example, in the application of power switching devices, enhanced (normally off)...

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Problems solved by technology

However, in the existing process, no matter whether it is to reduce the thickness of the nitride barrier layer under the gate, or to keep a layer of p-type nitride under the gate, or to implant negative ions in the barrier layer, it will be affected due to process problems. The stability and reliability of the device have a relatively large impact

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