Method for preparing dual-structure flocky ZnO-base transparent conductive thin film

A transparent conductive film and double-structure technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of adding process steps to anti-reflection films, and achieve the effects of low production cost, avoiding poor controllability, and uniform haze value

Active Publication Date: 2013-01-23
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the separate preparation of anti-reflection films requires additional process steps. How to simplify the process and reduce manufacturing costs is also of great significance to the production of solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film
  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film
  • Method for preparing dual-structure flocky ZnO-base transparent conductive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: get 12mL tetraethyl orthosilicate, 40mL ammonia water, 28mL deionized water and the ethylene glycol of 125mL mix, utilize magnetic stirrer to stir 8 hours at room temperature; Then add 12mL tetraethyl orthosilicate and 2mL deionized water, continue stirring for 8 hours to obtain solution A containing large particles; mix 8mL tetraethyl orthosilicate, 14mL ammonia water, 20mL deionized water and 150mL ethanol, stir at room temperature with a magnetic stirrer for 8 hours , to obtain solution B containing small particles; the particle size difference between large particles and small particles is 250~350nm; solution A and solution B are mixed and stirred for 3 hours at a volume ratio of 1:1 to obtain mixed solution C; At a pulling speed of 1000 μm / s, the mixed solution C was coated on one side of the photovoltaic glass substrate, and then the solution B was coated on the other side of the photovoltaic glass substrate, and then dried at 200°C for 30 minutes; us...

Embodiment 2

[0037] Embodiment 2: Get 8mL orthosilicate methyl ester, 14mL ammonia water, 20mL deionized water and 150mL isopropanol to mix, utilize magnetic stirrer to stir 9 hours at room temperature; Then add 8mL orthosilicate methyl ester and 2mL to Ionized water, continue to stir for 8 hours to obtain solution A containing large particles; take 8mL tetraethyl orthosilicate, 5mL ammonia water, 12mL deionized water and 150mL isopropanol, mix at room temperature with a magnetic stirrer for 6 hours , to obtain solution B containing small particles; the particle size difference between large particles and small particles is 250~350nm; solution A and solution B are mixed and stirred for 3 hours at a volume ratio of 2:1 to obtain mixed solution C; The mixed solution C is coated on one side of the photovoltaic glass substrate at a speed of 3000r / s, and then the solution B is coated on the other side of the photovoltaic glass substrate, and then dried at 150°C for 40 minutes; using DC magnetron...

Embodiment 3

[0038] Example 3: Mix 8 mL of n-butyl titanate, 12 mL of ammonia water, 16 mL of deionized water and 150 mL of ethanol, and stir with a magnetic stirrer at room temperature for 8 hours; then add 8 mL of n-butyl titanate and 1 mL of deionized water, and continued to stir for 8 hours to obtain solution A containing large particles; take 4mL of n-butyl titanate, 6mL of ammonia water, 10mL of deionized water and 150mL of ethanol and mix them with a magnetic stirrer at room temperature for 5 hours to obtain solution A containing small Particle solution B; the particle size difference between large particles and small particles is 250~350nm; Mix solution A and solution B at a volume ratio of 1:2 and stir for 4 hours to obtain mixed solution C; apply mixed solution C by spraying On one side of the photovoltaic glass substrate, the solution B was then coated on the other side of the photovoltaic glass substrate, and then dried at 250°C for 25 minutes; One side of the glass substrate i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a dual-structure flocky ZnO-base transparent conductive thin film. The method comprises the following steps of: 1) obtaining a solution A with large particles; 2) obtaining a solution B with small particles; 3) mixing and stirring the solution A and the solution B to obtain a mixed solution C; 4) coating the mixed solution C on one side of a photovoltaic glass substrate, coating the solution B on the other side of the photovoltaic glass substrate, and drying the glass substrate; and 5) sputtering and depositing on one side of the photovoltaic glass substrate to form the ZnO-base transparent conductive thin film, wherein in the step 1) and the step 2), a particle source is a silicon oxide or metal oxide precursor; and a particle size difference between each large particle and each small particle is 250 to 350 nm. By the method for preparing the dual-structure flocky ZnO-base transparent conductive thin film, the dual-structure flocky ZnO-base transparent conductive thin film can be obtained on one side of the photovoltaic glass substrate without execution of wet method etching, and an anti-reflection thin film can be obtained on the other side of the photovoltaic glass substrate; and the method is easy to operate and is suitable for industrial large-scale application.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive oxide films, and in particular relates to a preparation method of a double-structure suede ZnO-based transparent conductive film. Background technique [0002] At present, thin-film solar cells play an important role in various solar cells due to their advantages of low cost and low material consumption, among which transparent conductive oxide (TCO) thin films are an important part of thin-film solar cells. ZnO-based thin films have attracted more and more attention because of their advantages such as excellent photoelectric performance, abundant raw materials, low price, non-toxicity, and stability under hydrogen plasma. Wide range of applications. Since the photoelectric conversion layer of thin-film solar cells is very thin and has a low absorption rate of incident light, designing a suede light-trapping structure on the transparent conductive film can effectively improve the l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 李佳黄金华鲁越晖宋伟杰兰品军
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap