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A kind of metamaterial preparation method and metamaterial based on cmos technology

A technology of metamaterials and processes, applied in the field of metamaterials

Active Publication Date: 2016-05-04
KUANG CHI INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the CMOS process has not yet been applied to the preparation of metamaterials

Method used

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  • A kind of metamaterial preparation method and metamaterial based on cmos technology
  • A kind of metamaterial preparation method and metamaterial based on cmos technology
  • A kind of metamaterial preparation method and metamaterial based on cmos technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] see figure 1 , is a flow chart of a method for preparing a metamaterial based on a CMOS process provided by the present invention. The method for preparing a metamaterial includes the following steps:

[0023] S101: Form a first metal layer on the first dielectric layer.

[0024] Specifically, the first metal layer is formed on the first dielectric layer by physical vapor deposition; or, the first metal layer is formed on the first dielectric layer by chemical vapor deposition.

[0025] S102: Fabricate a microstructure on the first metal layer.

[0026] Specifically, a layer of photoresist is coated on the first metal layer, and the photoresist is photo-etched according to the preset microstructure; the pattern formed after photo-etching on the photo-resist is wet-etched or dry-etched transfer to the first metal layer by means of etching; and then remove the photoresist coated on the first metal layer to obtain the first metal layer with a microstructure.

[0027] S1...

Embodiment 2

[0041] see figure 2 , is a flow chart of a method for preparing a metamaterial based on a CMOS process provided in Embodiment 2 of the present invention. The method for preparing a metamaterial includes the following steps:

[0042] S201: Form a first metal layer on the first dielectric layer by evaporation.

[0043] Wherein, the material of the first dielectric layer is insulating material.

[0044] Wherein, the material of the first metal layer is conductive material such as copper and aluminum.

[0045] Wherein, the evaporation method is a technology well known to those skilled in the art in the CMOS process, and will not be repeated here.

[0046] S202: Fabricate a microstructure on the first metal layer.

[0047] Specifically, a layer of photoresist is coated on the first metal layer, and the photoresist is photo-etched according to the preset microstructure; the pattern formed after photo-etching on the photo-resist is wet-etched or dry-etched transfer to the first ...

Embodiment 3

[0063] see image 3 , is a flow chart of a method for preparing a metamaterial based on a CMOS process provided by the third implementation of the present invention. The method for preparing a metamaterial includes the following steps:

[0064] S301: Form a first metal layer on the first dielectric layer by sputtering.

[0065] Wherein, the material of the first dielectric layer is insulating material.

[0066] Wherein, the material of the first metal layer is conductive material such as copper and aluminum.

[0067] The sputtering method is well known to those skilled in the art in the CMOS process, and will not be repeated here.

[0068] S302: Fabricate a microstructure on the first metal layer.

[0069] Specifically, a layer of photoresist is coated on the first metal layer, and the photoresist is photo-etched according to the preset microstructure; the pattern formed after photo-etching on the photo-resist is wet-etched or dry-etched transfer to the first metal layer b...

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Abstract

The embodiment of the invention provides a metamaterial preparation method based on a CMOS (complementary metal-oxide-semiconductor transistor). The method comprises the following steps: forming a first metal layer on a first dielectric layer; manufacturing microstructures on the first metal layer; forming a second dielectric layer on the first metal layer with the microstructures; manufacturing a through hole on the second dielectric layer; forming a second metal layer on the second dielectric layer with the through hole; manufacturing microstructures on the second metal layer; and forming a third dielectric layer on the second metal layer with the microstructures so as to obtain the metamaterial. The embodiment of the invention further provides a metamaterial. The metamaterial which is higher in microstructure controllable performance and more accordant with design requirements and has richer electromagnetic characteristics is obtained.

Description

【Technical field】 [0001] The invention relates to the technical field of metamaterials, in particular to a method for preparing a metamaterial based on a CMOS process and the metamaterial. 【Background technique】 [0002] With the rapid development of high-tech such as radar detection, satellite communication, and aerospace, as well as the rise of research fields such as anti-electromagnetic interference, stealth technology, and microwave anechoic chambers, research on microwave-absorbing materials has attracted more and more attention. Because metamaterials can have very wonderful electromagnetic effects, they can be used in the fields of wave-absorbing materials and invisible materials, and become a hot spot in the field of wave-absorbing materials. The properties and functions of metamaterials mainly come from their internal structure. How to prepare a three-dimensional fine structure with periodic arrangement has become the key to the preparation technology of metamateria...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q15/00
Inventor 刘若鹏杨宗荣赵治亚缪锡根
Owner KUANG CHI INST OF ADVANCED TECH