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Method for casting ingot of pseudo-single crystal through large-sized crucible

A kind of single-crystal, large-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of impurities, small proportion of large grains, easy defects in silicon blocks, etc. The effect of increasing minority carrier life and increasing battery conversion efficiency

Inactive Publication Date: 2015-06-10
TIANWEI NEW ENERGY HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method of using a large-sized crucible to cast a quasi-single crystal ingot, which solves the problem that the proportion of large grains in a quasi-single crystal ingot is relatively small, and defects and impurities are prone to appear inside the silicon block

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A method for casting an ingot-like single crystal using a large-size crucible, comprising the following steps:

[0060] (a) Select a crucible with an outer diameter greater than 878mm and an inner diameter greater than 840mm as a carrier, and place 25 square silicon blocks with a cross-section of 156mm×156mm and a thickness of 25mm in the central part of the crucible, so that the square silicon blocks are surrounded by The inner walls of the crucible are equally spaced;

[0061] (b) Heat the crucible, select the heating mode as the power control mode, and select the pressure mode as the vacuum mode. Because the temperature control in the low temperature stage of the ingot furnace heater is unstable, it is difficult to control the temperature accurately, so the heating mode is selected as the power control mode; at the same time, because there may be some moisture in the furnace or on the silicon material at the beginning, vacuum is used as the pressure mode, it is conv...

Embodiment 2

[0104] This embodiment is basically the same as Embodiment 1, except that the power is set to 13kw in step (b1), and other settings remain unchanged.

Embodiment 3

[0106] This embodiment is basically the same as Embodiment 1, except that the power is set to 15kw in step (b1), and other settings remain unchanged.

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Abstract

The invention discloses a method for casting an ingot of a pseudo-single crystal through a large-sized crucible. The method comprises the following steps: (a) selecting the crucible with the outside diameter of more than 878mm and the inside diameter of more than 840mm, and feeding silicon material into the crucible; (b) heating the crucible by a graphite heater, switching the heating mode into a power control mode, and switching the pressure mode into a vacuum mode; (c) heating until the silicon material is molten, switching the heating mode into a temperature control mode, and switching the pressure mode into a gas mode; (d) starting crystal growth, and keeping the temperature control mode and the gas mode; (e) starting to anneal after the crystal growth; and (f) starting to cool after the annealing. By adopting the process mentioned above, the large-grained proportion of the pseudo-single crystal in ingot casting can be increased, and the inner defects and impurities of silicon blocks can be effectively controlled.

Description

technical field [0001] The invention relates to the field of quasi-single crystal ingot casting, in particular to a method for casting quasi-single crystal ingots using a large-size crucible. Background technique [0002] With the reduction of non-renewable energy (coal, oil, natural gas, etc.), energy issues have attracted global attention, and renewable energy has become a hot spot for development. The use of solar energy has attracted everyone's attention. As a renewable energy, solar photovoltaic power generation has become the core of new energy development because of its sufficient supply, clean and pollution-free advantages. At present, the most important solar photovoltaic cells are crystalline silicon solar cells, including monocrystalline silicon cells and polycrystalline silicon cells. Under traditional ingot casting conditions, polycrystalline silicon contains a large number of grain boundaries and defects, so that the conversion efficiency of polycrystalline si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 刘卓冰杨明珍刘俊兰洵林洪峰张凤鸣
Owner TIANWEI NEW ENERGY HLDG
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