Manufacturing method and device for reducing collector resistance through germanium-silicon HBT (Heterojunction Bipolar Transistor) with spuriously buried layer
A collector resistance and manufacturing method technology, applied in the manufacturing of electrical components, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as performance affecting the cut-off frequency of radio frequency circuits, large contact resistance, etc., achieve proper location, and improve breakdown. voltage, the effect of increasing the output power gain
Inactive Publication Date: 2013-03-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The inclusion of conventional metal silicide between the contact hole and polysilicon can greatly reduce the contact resistance (150 ohms / per deep contact hole), which affects the performance of cut-off frequency, one of the important performance indicators of RF circuits
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[0036] Such as figure 1 As shown, the silicon germanium HBT with the pseudo-buried layer in the embodiment of the present invention reduces the collector resistance of the device, and the active region is composed of shallow groove field oxygen, that is, figure 1 The shallow trench isolation layer 105 in isolation includes a collector region, a pseudo-buried layer, a base region and an emitter region.
[0037] A collector region is composed of a first ion implantation region 102 formed between the shallow trench isolation layer 105 and a second ion implantation region 103 formed at the edge of the active region and the shallow trench isolation layer 105, the first Both the ion implantation region 102 and the second ion implantation region 103 are N-type. The first ion implantation and the second ion implantation process together form a high-speed device, the implantation dose of the first ion implantation region 102 is relatively high, and the energy is low; the second ion im...
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The invention discloses a germanium-silicon HBT (Heterojunction Bipolar Transistor) device with a spuriously buried layer. The device comprises a collector region, an N-type spuriously buried layer, an intrinsic base region, an outer base region and an emitting region, wherein the collector region comprises a first N-type ion injection region formed between shallow slots, and a second N-type ion injection region formed in the first N-type ion injection region; the N-type spuriously buried layer is formed at the bottoms of the shallow slots positioned on the both sides of an active region, and metal silicide is formed on the contact parts of the N-type spuriously buried layer and the shallow slots; the intrinsic base region comprises a germanium-silicon epitaxial layer; the outer base region comprises polysilicon of the outer base region and metal silicide, the polysilicon of the outer base region is formed on the upper parts of the shallow slots and contacts the intrinsic base region, and the metal silicide is positioned on the upper part of the polysilicon of the outer base region and contacts the polysilicon of the outer base region; and the emitting region comprises N-type emitting electrode polysilicon which is formed on the upper part of the intrinsic base region and contacts the intrinsic base region. The invention also discloses a manufacturing method of the device. The germanium-silicon HBT device disclosed by the invention shortens transition time of a base region and an exhaust region formed by a junction of the base region and the collector region so as to improve the working cut-off frequency of the device, prevents generation of silicon oxides through the metal silicide with deep contact holes, and reduces the open-circuit risk of a circuit so as to improve the reliability of the device.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for manufacturing a silicon-germanium HBT with a pseudo-buried layer to reduce collector resistance. The invention also relates to devices fabricated by said method. Background technique [0002] Conventional germanium-silicon heterojunction bipolar transistors require a cut-off frequency as high as possible under a certain breakdown voltage. What mainly affects the cut-off frequency is the transit time of the base region and the depletion region formed by the base-collector junction. The cutoff frequency is inversely proportional to the transit time, which is proportional to the width of the base and collector-base junction depletion regions and the base and collector resistances (i.e., the collector-base junction RC delay). The junction depletion region width is in turn proportional to the emitter-to-collector breakdown voltage. Therefore, in order t...
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Login to View More IPC IPC(8): H01L21/331H01L21/768H01L29/737
Inventor 周正良周克然
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP