Preparation method for semiconductor device

Abstract

The invention provides a preparation method for a semiconductor device. The method comprises the following steps of: a) providing a first semiconductor substrate; b) forming a sacrifice layer on the first semiconductor substrate; c) preparing a functional layer of the semiconductor device on the sacrifice layer; d) separating the functional layer of the semiconductor device into a function unit of the semiconductor device, wherein the functional layer is provided with a pre-set array pattern; and e) utilizing a corrosion solution to corrode the sacrifice layer to realize the stripping of a first substrate and the functional layer. According to the preparation method of the semiconductor device, before the sacrifice layer is corroded, the functional layer of the semiconductor device is separated into an array of the function unit of the semiconductor device so that a corrosion path of the sacrifice layer which is corroded by the corrosion solution is shortened, and the stripping speed and the stripping uniformity of the substrate are greatly improved; and furthermore, the stripping finished-product rate and the production efficiency of the semiconductor device can be improved and the production cost is reduced.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor device. Background technique [0002] In semiconductor devices, such as thin-film photovoltaic cells (Photovoltaic Solar Cell), light-emitting diodes (Light Emission Diode), laser diodes (Laser Diode), photo detectors (Photo Detector), transistors (Transistor), etc., often A step involving the fabrication of functional layers of semiconductor devices on expensive single crystal semiconductor substrates. The finished semiconductor device or functional layer needs to be peeled off from the substrate to realize the reuse of the substrate, especially for expensive substrate materials. [0003] Taking gallium arsenide thin-film cells as an example, in the field of photovoltaics, triple-junction cells based on gallium arsenide are currently the cell technology with the highest conversion efficiency, with a theoretical efficiency of 63%, and the highest achieved efficiency is 43.5%. Although ga...

AI Technical Summary

Problems solved by technology

If the corrosion time is too long, the corrosion solution may penetrate the battery functional layer material from the defect of the battery functional layer material, causing the battery sheet to be perforated and broken, resulting in a low yield

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